RF-IC应用的高性能AlO层合TaO MIM电容器:AlO层对电特性的影响

Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005. Pub Date : 2005-06-06 DOI:10.1109/IITC.2005.1499936

K. Takeda, T. Mine, T. Ishikawa, T. Imai, T. Fujiwara

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引用次数: 0

摘要

展示了金属-绝缘体-金属(MIM)电容器与AlO/TaO/AlO堆叠的成功集成。3.3 V时的高电容密度超过10 fF//spl mu/m/sup 2/，具有优异的高频特性。电容器的TDDB寿命与AlO层中的电场强度密切相关，因此可以利用单层AlO电容器的TDDB寿命来预测其寿命。AlO/TaO/AlO电容器的电容电压依赖关系主要由AlO层的电容变化决定。因此，单层AlO电容器的电压线性系数可以用来预测AlO/TaO/AlO电容器的系数。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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High-performance AlO-laminated TaO MIM capacitors for RF-IC applications: effects of the AlO layer on electrical characteristics

The successful integration of a metal-insulator-metal (MIM) capacitor with an AlO/TaO/AlO stack is demonstrated. High capacitance density of more than 10 fF//spl mu/m/sup 2/ at 3.3 V and superior high-frequency characteristics are confirmed. The TDDB lifetime of the capacitor is strongly dependent on the electric field strength in the AlO layer, so the lifetime can be predicted by using the TDDB lifetime of a single-layer AlO capacitor. The capacitance voltage dependence of the AlO/TaO/AlO capacitor is dominated by the change in capacitance in the AlO layer. Thus, the voltage-linearity coefficients of single-layer AlO capacitors can be used to predict the coefficients of AlO/TaO/AlO capacitors.

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Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005.

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