Low resistive and highly reliable Cu dual-damascene interconnect technology using self-formed MnSi/sub x/O/sub y/ barrier layer

Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005. Pub Date : 2005-06-06 DOI:10.1109/IITC.2005.1499975

T. Usui, H. Nasu, J. Koike, M. Wada, S. Takahashi, N. Shimizu, T. Nishikawa, A. Yoshimaru, H. Shibata

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引用次数: 7

Abstract

Copper (Cu) dual-damascene interconnects with self-formed MnSi/sub x/O/sub y/ barrier layer using a copper-manganese (Cu-Mn) alloy seed layer is successfully fabricated for the first time. No delamination is found in the chemical mechanical polishing process, probably because of better adhesion strength between the MnSi/sub x/O/sub y/ barrier and dielectric. More than 90% yield is obtained for a 1 million via chain. Microstructure analysis by transmission electron microscopy shows that an approximately 2 nm thick and continuous MnSi/sub x/O/sub y/ layer is formed at the interface between Cu and dielectric of the via and trench and there is no barrier at the via bottom. This via structure without the bottom barrier provides these essential advantages: reduced via resistance; significant via-electromigration lifetime improvement due to there being no flux divergence site at the via; excellent stress-induced voiding performance.

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采用自形成的MnSi/sub x/O/sub y/阻挡层的低电阻和高可靠的Cu双damase互连技术

首次成功制备了铜锰(Cu- mn)合金种子层自形成MnSi/sub x/O/sub y/阻挡层的铜(Cu)双damascene互连。化学机械抛光过程中没有发现分层现象，这可能是由于MnSi/sub x/O/sub y/阻挡层与介电介质之间的粘附强度较好。100万通链的收率可达90%以上。透射电子显微镜微观结构分析表明，在孔和沟槽的Cu和介电介质的界面处形成了约2 nm厚的连续MnSi/sub x/O/sub y/层，孔底部没有阻挡层。这种没有底部屏障的通孔结构提供了以下基本优点:减少了通孔阻力;由于在通孔处没有通量发散点，显着提高了通孔电迁移寿命;优异的应力诱导排空性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005.

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