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ABOUT THE CHARACTERISTICS OF MULTILAYER THIN-FILM STRUCTURES WITH DYES BASED ON TITANIUM DIOXIDE 二氧化钛染料多层薄膜结构的特性研究
SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS Pub Date : 2021-08-30 DOI: 10.37681/2181-1652-019-x-2021-4-4
O. Mamatkarimov, A. Abdukarimov, B. Uktamaliev
{"title":"ABOUT THE CHARACTERISTICS OF MULTILAYER THIN-FILM STRUCTURES WITH DYES BASED ON TITANIUM DIOXIDE","authors":"O. Mamatkarimov, A. Abdukarimov, B. Uktamaliev","doi":"10.37681/2181-1652-019-x-2021-4-4","DOIUrl":"https://doi.org/10.37681/2181-1652-019-x-2021-4-4","url":null,"abstract":"Polyethylene oxide (PEO) gel polymer electrolytes (GPEs) were prepared using tetrapropylammonium iodide (TPAI). The mass fracti on (TPAI) in the electrolyte was varied to increase the productivity of the solar cell. It increa sed the ionic conductivity of the electrolyte at room temperature from 8.426 ଵ ୫ʝ୦୫כୱ୫ and 373K temperature to 18.117 ଵ ୫ʝ୦୫כୱ୫ . The increase in ionic conductivity with the addition of TPAI salts was associated with an increase in the diffusion coefficient, mobility, and density of charge carriers. Keywords : dye-sensitized solar cell, dye-sensitized solar cells, photoelectric electrode, loop electrode, photoanode, electrolyte, polymer electrolyte gel","PeriodicalId":153395,"journal":{"name":"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132764481","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
INFLUENCE О F А STR О NG M А GNETIC FIELD О N FERMI ENERGY О SCILL А TI О NS IN TW О -DIMENSI О N А L SEMIC О NDUCT О R M А TERI А LS
SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS Pub Date : 2021-08-30 DOI: 10.37681/2181-1652-019-x-2021-4-5
U.I. Erk а b о ev, R.G. R а khim о v, N. А. .. S а yid о v, J.I. Mirz а ev, U.B. Negmatov
{"title":"INFLUENCE О F А STR О NG M А GNETIC FIELD О N FERMI ENERGY О SCILL А TI О NS IN TW О -DIMENSI О N А L SEMIC О NDUCT О R M А TERI А LS","authors":"U.I. Erk а b о ev, R.G. R а khim о v, N. А. .. S а yid о v, J.I. Mirz а ev, U.B. Negmatov","doi":"10.37681/2181-1652-019-x-2021-4-5","DOIUrl":"https://doi.org/10.37681/2181-1652-019-x-2021-4-5","url":null,"abstract":"This article shows that the Fermi levels of a nanoscale semiconductor in a quantizing magnetic field are quantized. A method is proposed for calculating the Fermi energy oscillations for a two-dimensional electron gas at different magnetic fields and temperatures. An analytical expression is obtained for calculating the Fermi-Dira c distribution function at high temperatures and weak magnetic fields. With the help of the propos ed formula, the experimental results in nanoscale semiconductor structures are investigated. Using fo rmula, Fermi energy oscillations are explained for two-dimensional electron gases in quantum wells (quantum wells, mainly GaAs/GaAlAs heterostructures) with a parabolic dispersion law. Keywоrds:quаntizing mа gnetic field, temperаture, Fermi energy, n аnоscаle semicоnductоrs,twо-dimensiоnаl structures, dispersiоn.","PeriodicalId":153395,"journal":{"name":"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS","volume":"60 33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126979608","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
EFFECTS OF TEMPERATURE AND A TRANSVERSAL QUANTIZING MAGNETIC FIELD ON THE FORBIDDEN BAND OF A QUANTUM WELL 温度和横向量子化磁场对量子阱禁带的影响
SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS Pub Date : 2021-08-30 DOI: 10.37681/2181-1652-019-x-2021-4-10
N. А. .. S а yid о v, R.G. R а khim о v, J.I. Mirz а ev, U.B. Negmatov
{"title":"EFFECTS OF TEMPERATURE AND A TRANSVERSAL QUANTIZING MAGNETIC FIELD ON THE FORBIDDEN BAND OF A QUANTUM WELL","authors":"N. А. .. S а yid о v, R.G. R а khim о v, J.I. Mirz а ev, U.B. Negmatov","doi":"10.37681/2181-1652-019-x-2021-4-10","DOIUrl":"https://doi.org/10.37681/2181-1652-019-x-2021-4-10","url":null,"abstract":"This article considers the temperature dependence of the band gap in quantum-well heterostructures in the presence of a transverse quantizing magnetic field. An analytical expression is obtained for determining the band gap of a rect angular quantum well at various magnetic fields and temperatures. The proposed formulas well exp lain the experimental results obtained for quantum-well semiconductor structures","PeriodicalId":153395,"journal":{"name":"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127729342","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
L А ND А U LEVELS IN TW О -DIMENSI О N А L SEMIC О NDUCT О R STRUCTURES 美国洛杉矶АNDА水平在TWО-DIMENSIОNАL SEMICОNDUCTОR STRUCTURES
SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS Pub Date : 2021-08-30 DOI: 10.37681/2181-1652-019-x-2021-4-1
G. Guly а m о v, J.I. Mirz а ev, U.I. Erk а b о ev, А. .. О. .. Y о qubj о n о v
{"title":"L А ND А U LEVELS IN TW О -DIMENSI О N А L SEMIC О NDUCT О R STRUCTURES","authors":"G. Guly а m о v, J.I. Mirz а ev, U.I. Erk а b о ev, А. .. О. .. Y о qubj о n о v","doi":"10.37681/2181-1652-019-x-2021-4-1","DOIUrl":"https://doi.org/10.37681/2181-1652-019-x-2021-4-1","url":null,"abstract":"В данной статье проводится математическое моделирование процессов с использованием экспериментальных значений непрерывного спектра плотности состояний в двумерных электронных газах и показана возможность расчета дискретных уровней Ландау . Предложена теория температурной зависимости колебаний квантового эффекта с учетом теплового уширения уровней Ландау в двумерных полупроводниковых структурах . Получено аналитическое выражение для расчета влияния давления на уровни Ландау электронов в зоне проводимости","PeriodicalId":153395,"journal":{"name":"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115631455","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
CALCULATION OF COMPONENTS OF DEFORMATION SENSITIVITY OF SILICON SAMPLES WITH DEEP IMPURITY LEVELS 深杂质硅试样变形灵敏度分量的计算
SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS Pub Date : 2021-08-30 DOI: 10.37681/2181-1652-019-x-2021-4-8
R. Khamidov, O. O. Mamatkarimov
{"title":"CALCULATION OF COMPONENTS OF DEFORMATION SENSITIVITY OF SILICON SAMPLES WITH DEEP IMPURITY LEVELS","authors":"R. Khamidov, O. O. Mamatkarimov","doi":"10.37681/2181-1652-019-x-2021-4-8","DOIUrl":"https://doi.org/10.37681/2181-1652-019-x-2021-4-8","url":null,"abstract":"In this paper presents that samples of sili con with acceptor impurities have a greater static and lower dynamic strain sensitivity than silicon samples with donor and amphoteric impurities. And samples of silicon with ampho teric impurities, almost does not have static components of strain sensitivity at pulse hydrostati c pressure. In such samples, the strain sensitivity is related only to the temperature and relaxation effects","PeriodicalId":153395,"journal":{"name":"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS","volume":"118 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127114739","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
INFLUENCE OF THE EFFECTIVE MASS OF THE DENSITY OF THE STATE ON THE TEMPERATURE DEPENDENCE OF THE BAND BAND WIDTH IN SOLID SOLUTIONS p -Bi 2-x Sb x Te 3-y Se y 固溶体p -Bi 2-x Sb x 3-y Se中状态密度的有效质量对能带宽度温度依赖性的影响
SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS Pub Date : 2021-08-30 DOI: 10.37681/2181-1652-019-x-2021-4-6
N. Sharibaev, M. G. Dadamirzaev, R.N. Sharifbaev
{"title":"INFLUENCE OF THE EFFECTIVE MASS OF THE DENSITY OF THE STATE ON THE TEMPERATURE DEPENDENCE OF THE BAND BAND WIDTH IN SOLID SOLUTIONS p -Bi 2-x Sb x Te 3-y Se y","authors":"N. Sharibaev, M. G. Dadamirzaev, R.N. Sharifbaev","doi":"10.37681/2181-1652-019-x-2021-4-6","DOIUrl":"https://doi.org/10.37681/2181-1652-019-x-2021-4-6","url":null,"abstract":"The temperature dependence of the energy spectrum of semiconductors is well explained by the thermal broadening of discrete en ergy spectra. The temperature dependence of the band gap is considered as broadening of the energy states of the conduction and valence bands. In these works, it was assumed that the effective mass of the density of states does not depend on temperature. However, as experiments have shown, th e effective mass of the de nsity of states depends on temperature. These changes in the effective ma ss change the temperature dependence of the band gap","PeriodicalId":153395,"journal":{"name":"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132208379","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
PREPARATION OF POLY (METHYL METHACRYLATE)-BASED POLYMER ELECTROLYTES FOR SOLID-STATE FOR Mg-ION BATTERIES 固态镁离子电池用聚甲基丙烯酸甲酯基聚合物电解质的制备
SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS Pub Date : 2021-08-30 DOI: 10.37681/2181-1652-019-x-2021-4-2
O. Mamatkarimov, B. Uktamaliyev, A. Abdukarimov
{"title":"PREPARATION OF POLY (METHYL METHACRYLATE)-BASED POLYMER ELECTROLYTES FOR SOLID-STATE FOR Mg-ION BATTERIES","authors":"O. Mamatkarimov, B. Uktamaliyev, A. Abdukarimov","doi":"10.37681/2181-1652-019-x-2021-4-2","DOIUrl":"https://doi.org/10.37681/2181-1652-019-x-2021-4-2","url":null,"abstract":"It is known that the new metal-based solid polymer electrolyte batteries are characterized by high energy and power density, low cost, simplicity of manufacturing technology and long-term non-discharge. Therefore, the technology of their preparation is considered in this study","PeriodicalId":153395,"journal":{"name":"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121108596","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IMPEDANCE SPECTROSCOPY OF NEW TY PE SOLAR ELEMENTS IN STUDYING DEPENDENCE ON EXTERNAL FORCES 新型聚乙烯太阳能元件的阻抗谱研究对外力的依赖性
SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS Pub Date : 2021-08-30 DOI: 10.37681/2181-1652-019-x-2021-4-3
N. Sharibaev, A.K. Ergashov, R.N. Sharifbaev
{"title":"IMPEDANCE SPECTROSCOPY OF NEW TY PE SOLAR ELEMENTS IN STUDYING DEPENDENCE ON EXTERNAL FORCES","authors":"N. Sharibaev, A.K. Ergashov, R.N. Sharifbaev","doi":"10.37681/2181-1652-019-x-2021-4-3","DOIUrl":"https://doi.org/10.37681/2181-1652-019-x-2021-4-3","url":null,"abstract":"Planning and improvement work has been done to create a mobile device that will increase the efficiency and speed of work when using experiments on low-power solar energy and sensitive photocells. (TiO2) was selected to study th e dependence of the selection of different local dye compositions and (DSSC) permeability on exter nal influences on the factors influencing the efficiency.","PeriodicalId":153395,"journal":{"name":"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122180804","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
TEMPERATURE DEPENDENCE OF ACTIVE AND REACTIVE IMPEDANCES OF PMMA-EC-LiTf 2 / MgTf 2 SOLID POLYMER ELECTROLYTES pmma - ec - litf2 / MgTf 2固体聚合物电解质有功阻抗和反应阻抗的温度依赖性
SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS Pub Date : 2021-08-30 DOI: 10.37681/2181-1652-019-x-2021-4-7
O. Mamatkarimov, B. Uktamaliyev, A. Abdukarimov, A. Arof
{"title":"TEMPERATURE DEPENDENCE OF ACTIVE AND REACTIVE IMPEDANCES OF PMMA-EC-LiTf 2 / MgTf 2 SOLID POLYMER ELECTROLYTES","authors":"O. Mamatkarimov, B. Uktamaliyev, A. Abdukarimov, A. Arof","doi":"10.37681/2181-1652-019-x-2021-4-7","DOIUrl":"https://doi.org/10.37681/2181-1652-019-x-2021-4-7","url":null,"abstract":"In this work, PMMA-EC-LiTf 2 , PMMA-EC-MgTf 2 samples were prepared at a concentration of 20%. Using Nyquist coordinates, results were obtained fo r active and reactive impedances at temperatures from 243K to 283 K and at temperatures from 303 K to 373 K. R b from MgTf 2 system are lower than LiTf 2 in the room temperature. PMMA-EC-MgTf 2 sample conductivity is ͶǤ͵Ͷ ή ͳͲ ିହ ଵ ʝˏή˔ˏ , PMMA-EC-LiTf 2 sample conductivity is ͵ǡͲ͹ ή ͳͲ ିସ ଵ ʝˏή˔ˏ Keywords: solid polymer electrolyte, impedance sp ectroscopy, active impedance, reactive impedance","PeriodicalId":153395,"journal":{"name":"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128758398","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
INFLUENCE OF TECHNOLOGICAL IMPURITIES ON THE FORMATION OF RADIATION DEFECTS IN SILICON WITH TRANSITION ELEMENTS 工艺杂质对含过渡元素硅辐射缺陷形成的影响
SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS Pub Date : 2021-06-30 DOI: 10.37681/2181-1652-019-x-2021-3-3
S. Utamuradova, D. Rakhmanov
{"title":"INFLUENCE OF TECHNOLOGICAL IMPURITIES ON THE FORMATION OF RADIATION DEFECTS IN SILICON WITH TRANSITION ELEMENTS","authors":"S. Utamuradova, D. Rakhmanov","doi":"10.37681/2181-1652-019-x-2021-3-3","DOIUrl":"https://doi.org/10.37681/2181-1652-019-x-2021-3-3","url":null,"abstract":"The purpose of this work is to study the influence of the content of growth impurities (oxygen and carbon) on the formation of radiation defects (RD) in Si with transition elements irradiated with 60Co γ-quanta using the methods of deep level transient spectroscopy (DLTS).","PeriodicalId":153395,"journal":{"name":"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS","volume":"513 1-2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123691244","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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