{"title":"工艺杂质对含过渡元素硅辐射缺陷形成的影响","authors":"S. Utamuradova, D. Rakhmanov","doi":"10.37681/2181-1652-019-x-2021-3-3","DOIUrl":null,"url":null,"abstract":"The purpose of this work is to study the influence of the content of growth impurities (oxygen and carbon) on the formation of radiation defects (RD) in Si with transition elements irradiated with 60Co γ-quanta using the methods of deep level transient spectroscopy (DLTS).","PeriodicalId":153395,"journal":{"name":"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS","volume":"513 1-2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"INFLUENCE OF TECHNOLOGICAL IMPURITIES ON THE FORMATION OF RADIATION DEFECTS IN SILICON WITH TRANSITION ELEMENTS\",\"authors\":\"S. Utamuradova, D. Rakhmanov\",\"doi\":\"10.37681/2181-1652-019-x-2021-3-3\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The purpose of this work is to study the influence of the content of growth impurities (oxygen and carbon) on the formation of radiation defects (RD) in Si with transition elements irradiated with 60Co γ-quanta using the methods of deep level transient spectroscopy (DLTS).\",\"PeriodicalId\":153395,\"journal\":{\"name\":\"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS\",\"volume\":\"513 1-2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-06-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.37681/2181-1652-019-x-2021-3-3\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.37681/2181-1652-019-x-2021-3-3","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
INFLUENCE OF TECHNOLOGICAL IMPURITIES ON THE FORMATION OF RADIATION DEFECTS IN SILICON WITH TRANSITION ELEMENTS
The purpose of this work is to study the influence of the content of growth impurities (oxygen and carbon) on the formation of radiation defects (RD) in Si with transition elements irradiated with 60Co γ-quanta using the methods of deep level transient spectroscopy (DLTS).
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