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STUDY AND ANALYSIS OF ELECTRICAL PARAMETERS OF SILICON PHOTOELECTRIC BATTERIES FROM VARIOUS TYPES OF SOLAR CELLS 对不同类型太阳能电池硅光电电池的电学参数进行了研究和分析
SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS Pub Date : 2021-10-30 DOI: 10.37681/2181-1652-019-x-2021-5-9
М.Н. Турсунов, Х. Сабиров, Ш.Н. Абилфайзиев, Б.А. Юлдошов
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引用次数: 0
STUDY OF TEMPERATURE EFFECTS IN SILICON STRUCTURES WITH VANADIUM IMPURITIES 含钒硅结构的温度效应研究
SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS Pub Date : 2021-10-30 DOI: 10.37681/2181-1652-019-x-2021-5-1
Х.С. Далиев, З.М. Хусанов
{"title":"STUDY OF TEMPERATURE EFFECTS IN SILICON STRUCTURES WITH VANADIUM IMPURITIES","authors":"Х.С. Далиев, З.М. Хусанов","doi":"10.37681/2181-1652-019-x-2021-5-1","DOIUrl":"https://doi.org/10.37681/2181-1652-019-x-2021-5-1","url":null,"abstract":"The current-voltage characteristics of Au-nCdS- nSi-pCdTe-Au at 300 K. It was found that the current-voltage characteristics of such structures has three segments: power-law - I∝V2.44, sublinear V∝exp(Jad), and pre-breakdown dependence - I∝V5.55. The concentrations of deep impurities responsible for the appearance of a sublinear section of the current-voltage characteristic. experimental the results are explained on the basis of theoretical ideas about the complex nature recombination processes in such materials.","PeriodicalId":153395,"journal":{"name":"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123046532","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
INFLUENCE OF DEFORMATION ON PHOTOGRAPHY OF A p-n-JUNCTION UNDER THE INFLUENCE OF LIGHT AND IN A SUPERHIGH-FREQUENCY FIELD 超高频光场中变形对pn结成像的影响
SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS Pub Date : 2021-10-30 DOI: 10.37681/2181-1652-019-x-2021-5-2
Г. Гулямов, М.Г. Дадамирзаев, М.О. Косимова, М.К. Уктамова
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引用次数: 0
STUDY OF THE ELEMENTAL COMPOSITION AND STRUCTURE OF HIGHER MANGANESE SILICIDES 高锰硅化物的元素组成及结构研究
SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS Pub Date : 2021-10-30 DOI: 10.37681/2181-1652-019-x-2021-5-4
Н. Зикриллаев, Т. Комилов, А.Ж. Хусанов, К.К Курбоналиев, М.М. Шоабдурахимова
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引用次数: 0
INVESTIGATION OF THE INFLUENCE OF Si-SiO2 TRANSITION LAYERS ON THE CAPACITY-VOLTAGE CHARACTERISTICS IN THREE-LAYER SILICON STRUCTURES 硅- sio2过渡层对三层硅结构中电容-电压特性影响的研究
SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS Pub Date : 2021-10-30 DOI: 10.37681/2181-1652-019-x-2021-5-6
Ш.К. Далиев, Ф.А. Сапаров
{"title":"INVESTIGATION OF THE INFLUENCE OF Si-SiO2 TRANSITION LAYERS ON THE CAPACITY-VOLTAGE CHARACTERISTICS IN THREE-LAYER SILICON STRUCTURES","authors":"Ш.К. Далиев, Ф.А. Сапаров","doi":"10.37681/2181-1652-019-x-2021-5-6","DOIUrl":"https://doi.org/10.37681/2181-1652-019-x-2021-5-6","url":null,"abstract":"INVESTIGATION OF THE INFLUENCE OF Si-SiO2 TRANSITION LAYERS ON THE CAPACITY-VOLTAGE CHARACTERISTICS IN THREE-LAYER SILICON STRUCTURES","PeriodicalId":153395,"journal":{"name":"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126482566","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
THIN FILMS OF SOLID SOLUTION CdXZn1XS COMPOUND GROWN IN A HYDROGEN FLOW 固溶CdXZn1XS化合物薄膜在氢流中生长
SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS Pub Date : 2021-10-30 DOI: 10.37681/2181-1652-019-x-2021-5-7
Ш.Б. Утамурадова, С.А. Музафарова, А.С. Ачилов, К.М. Файзуллаев
{"title":"THIN FILMS OF SOLID SOLUTION CdXZn1XS COMPOUND GROWN IN A HYDROGEN FLOW","authors":"Ш.Б. Утамурадова, С.А. Музафарова, А.С. Ачилов, К.М. Файзуллаев","doi":"10.37681/2181-1652-019-x-2021-5-7","DOIUrl":"https://doi.org/10.37681/2181-1652-019-x-2021-5-7","url":null,"abstract":"THIN FILMS OF SOLID SOLUTION CdXZn1XS COMPOUND GROWN IN A HYDROGEN FLOW","PeriodicalId":153395,"journal":{"name":"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115954409","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
RADIATIONS FOR THE LIFETIME OF CHARGE CARRIERS IN SILICON DOPED WITH COPPER AND IRIDIUM 掺杂铜和铱的硅中载流子寿命的辐射
SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS Pub Date : 2021-10-30 DOI: 10.37681/2181-1652-019-x-2021-5-5
М.Ю. Ташметов, Ш.А. Махмудов, А.Р. Рафиков, А.А. Сулаймонов, М.Ф. Жураева, Ж.С. Мирзарайимов, Ф.З. Мирзарайимова
{"title":"RADIATIONS FOR THE LIFETIME OF CHARGE CARRIERS IN SILICON DOPED WITH COPPER AND IRIDIUM","authors":"М.Ю. Ташметов, Ш.А. Махмудов, А.Р. Рафиков, А.А. Сулаймонов, М.Ф. Жураева, Ж.С. Мирзарайимов, Ф.З. Мирзарайимова","doi":"10.37681/2181-1652-019-x-2021-5-5","DOIUrl":"https://doi.org/10.37681/2181-1652-019-x-2021-5-5","url":null,"abstract":"RADIATIONS FOR THE LIFETIME OF CHARGE CARRIERS IN SILICON DOPED WITH COPPER AND IRIDIUM","PeriodicalId":153395,"journal":{"name":"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS","volume":"81 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121681876","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
HIGH-RESOLUTION X-RAY DIFFRACTION INVESTIGATIONS OF FILMS OF SOLID SOLUTIONS (GaAs)1-x-y(Ge2)x(ZnSe)y 固溶体(GaAs)1-x-y(Ge2)x(ZnSe)y薄膜的高分辨率x射线衍射研究
SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS Pub Date : 2021-10-30 DOI: 10.37681/2181-1652-019-x-2021-5-8
С.З. Зайнабидинов, А.Й. Бобоев, Д.П. Абдурахимов
{"title":"HIGH-RESOLUTION X-RAY DIFFRACTION INVESTIGATIONS OF FILMS OF SOLID SOLUTIONS (GaAs)1-x-y(Ge2)x(ZnSe)y","authors":"С.З. Зайнабидинов, А.Й. Бобоев, Д.П. Абдурахимов","doi":"10.37681/2181-1652-019-x-2021-5-8","DOIUrl":"https://doi.org/10.37681/2181-1652-019-x-2021-5-8","url":null,"abstract":"HIGH-RESOLUTION X-RAY DIFFRACTION INVESTIGATIONS OF FILMS OF SOLID SOLUTIONS (GaAs)1-x-y(Ge2)x(ZnSe)y","PeriodicalId":153395,"journal":{"name":"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122832375","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
FORMATION OF DEFECTS ON THE SURFACE OF LiF CRYSTALS DURING BOMBARDING WITH CHLORINE IONS 氯离子轰击锂晶体表面时形成的缺陷
SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS Pub Date : 2021-10-30 DOI: 10.37681/2181-1652-019-x-2021-5-3
Б.Э. Эгамбердиев, У.Б. Шаропов, Н. Норкулов
{"title":"FORMATION OF DEFECTS ON THE SURFACE OF LiF CRYSTALS DURING BOMBARDING WITH CHLORINE IONS","authors":"Б.Э. Эгамбердиев, У.Б. Шаропов, Н. Норкулов","doi":"10.37681/2181-1652-019-x-2021-5-3","DOIUrl":"https://doi.org/10.37681/2181-1652-019-x-2021-5-3","url":null,"abstract":"FORMATION OF DEFECTS ON THE SURFACE OF LiF CRYSTALS DURING BOMBARDING WITH CHLORINE IONS","PeriodicalId":153395,"journal":{"name":"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122361594","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
CALCULATION THE TEMPERATURE DEPEND ENCE THE ENERGY SPECTRUM OF CHARGE CARRIERS IN SEM ICONDUCTORS EXPOSED TO A STRONG MAGNETIC FIELD 在强磁场作用下，sem导体中载流子能谱与温度关系的计算
SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS Pub Date : 2021-08-30 DOI: 10.37681/2181-1652-019-x-2021-4-11
M. G. Dadamirzayev
{"title":"CALCULATION THE TEMPERATURE DEPEND ENCE THE ENERGY SPECTRUM OF CHARGE CARRIERS IN SEM ICONDUCTORS EXPOSED TO A STRONG MAGNETIC FIELD","authors":"M. G. Dadamirzayev","doi":"10.37681/2181-1652-019-x-2021-4-11","DOIUrl":"https://doi.org/10.37681/2181-1652-019-x-2021-4-11","url":null,"abstract":"The energy spectrum of free holes in a st rong magnetic field is calculated for a non- quadratic dispersion law. The temperature dependen ce of the broadening of the Landau levels of holes in crystals with the Kane dispersion law has been studied. A new method for calculating the discrete energy spectrum in a quantizing magnetic field is proposed","PeriodicalId":153395,"journal":{"name":"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS","volume":"109 3‐4","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120851357","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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