STUDY OF TEMPERATURE EFFECTS IN SILICON STRUCTURES WITH VANADIUM IMPURITIES

Abstract

The current-voltage characteristics of Au-nCdS- nSi-pCdTe-Au at 300 K. It was found that the current-voltage characteristics of such structures has three segments: power-law - I∝V2.44, sublinear V∝exp(Jad), and pre-breakdown dependence - I∝V5.55. The concentrations of deep impurities responsible for the appearance of a sublinear section of the current-voltage characteristic. experimental the results are explained on the basis of theoretical ideas about the complex nature recombination processes in such materials.