温度和横向量子化磁场对量子阱禁带的影响

SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS Pub Date : 2021-08-30 DOI:10.37681/2181-1652-019-x-2021-4-10

N. А. .. S а yid о v, R.G. R а khim о v, J.I. Mirz а ev, U.B. Negmatov

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引用次数: 0

摘要

本文研究了横向量子化磁场存在下量子阱异质结构带隙的温度依赖性。得到了矩形角量子阱在不同磁场和温度下带隙的解析表达式。所提出的公式可以很好地解释量子阱半导体结构的实验结果

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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EFFECTS OF TEMPERATURE AND A TRANSVERSAL QUANTIZING MAGNETIC FIELD ON THE FORBIDDEN BAND OF A QUANTUM WELL

This article considers the temperature dependence of the band gap in quantum-well heterostructures in the presence of a transverse quantizing magnetic field. An analytical expression is obtained for determining the band gap of a rect angular quantum well at various magnetic fields and temperatures. The proposed formulas well exp lain the experimental results obtained for quantum-well semiconductor structures

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SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS

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