INFLUENCE OF TECHNOLOGICAL IMPURITIES ON THE FORMATION OF RADIATION DEFECTS IN SILICON WITH TRANSITION ELEMENTS

SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS Pub Date : 2021-06-30 DOI:10.37681/2181-1652-019-x-2021-3-3

S. Utamuradova, D. Rakhmanov

引用次数: 0

Abstract

The purpose of this work is to study the influence of the content of growth impurities (oxygen and carbon) on the formation of radiation defects (RD) in Si with transition elements irradiated with 60Co γ-quanta using the methods of deep level transient spectroscopy (DLTS).

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工艺杂质对含过渡元素硅辐射缺陷形成的影响

本文采用深能级瞬态光谱(DLTS)方法研究了生长杂质(氧和碳)含量对60Co γ-量子辐照过渡元素Si中辐射缺陷(RD)形成的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS

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