INFLUENCE OF THE EFFECTIVE MASS OF THE DENSITY OF THE STATE ON THE TEMPERATURE DEPENDENCE OF THE BAND BAND WIDTH IN SOLID SOLUTIONS p -Bi 2-x Sb x Te 3-y Se y

Abstract

The temperature dependence of the energy spectrum of semiconductors is well explained by the thermal broadening of discrete en ergy spectra. The temperature dependence of the band gap is considered as broadening of the energy states of the conduction and valence bands. In these works, it was assumed that the effective mass of the density of states does not depend on temperature. However, as experiments have shown, th e effective mass of the de nsity of states depends on temperature. These changes in the effective ma ss change the temperature dependence of the band gap