深杂质硅试样变形灵敏度分量的计算

SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS Pub Date : 2021-08-30 DOI:10.37681/2181-1652-019-x-2021-4-8

R. Khamidov, O. O. Mamatkarimov

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引用次数: 0

摘要

本文提出了含有受体杂质的硅样品比含有供体和两性杂质的硅样品具有更高的静态应变敏感性和更低的动态应变敏感性。而含两性杂质的硅样品，在脉冲静水压力下几乎不具有应变敏感性的静态组分。在这些样品中，应变敏感性只与温度和松弛效应有关

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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CALCULATION OF COMPONENTS OF DEFORMATION SENSITIVITY OF SILICON SAMPLES WITH DEEP IMPURITY LEVELS

In this paper presents that samples of sili con with acceptor impurities have a greater static and lower dynamic strain sensitivity than silicon samples with donor and amphoteric impurities. And samples of silicon with ampho teric impurities, almost does not have static components of strain sensitivity at pulse hydrostati c pressure. In such samples, the strain sensitivity is related only to the temperature and relaxation effects

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SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS

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