U.I. Erk а b о ev, R.G. R а khim о v, N. А. .. S а yid о v, J.I. Mirz а ev, U.B. Negmatov
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摘要

本文证明了纳米级半导体在量子化磁场中的费米能级是量子化的。提出了一种计算二维电子气体在不同磁场和温度下的费米能量振荡的方法。得到了计算高温弱磁场下费米-狄拉c分布函数的解析表达式。利用该公式对纳米级半导体结构的实验结果进行了研究。利用该公式,解释了二维电子气体在量子阱(量子阱,主要是GaAs/GaAlAs异质结构)中具有抛物色散规律的费米能量振荡。关键词:量子化磁场,温度,费米能量,n级,两维,结构,分散。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
INFLUENCE О F А STR О NG M А GNETIC FIELD О N FERMI ENERGY О SCILL А TI О NS IN TW О -DIMENSI О N А L SEMIC О NDUCT О R M А TERI А LS
This article shows that the Fermi levels of a nanoscale semiconductor in a quantizing magnetic field are quantized. A method is proposed for calculating the Fermi energy oscillations for a two-dimensional electron gas at different magnetic fields and temperatures. An analytical expression is obtained for calculating the Fermi-Dira c distribution function at high temperatures and weak magnetic fields. With the help of the propos ed formula, the experimental results in nanoscale semiconductor structures are investigated. Using fo rmula, Fermi energy oscillations are explained for two-dimensional electron gases in quantum wells (quantum wells, mainly GaAs/GaAlAs heterostructures) with a parabolic dispersion law. Keywоrds:quаntizing mа gnetic field, temperаture, Fermi energy, n аnоscаle semicоnductоrs,twо-dimensiоnаl structures, dispersiоn.
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