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TYPE OF EXCESS CURRENT GENERATED IN TUNNEL DIODES AND BARRIER TRANSPARENCY COEFFICIENT (TRANSFER COEFFICIENT) IN DIFFERENT MODELS 隧道二极管产生的过量电流类型和不同模型的势垒透明系数(传递系数)
SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS Pub Date : 2021-06-30 DOI: 10.37681/2181-1652-019-x-2021-3-5
G. Gulyamov, M. G. Dadamirzayev, M.K. Uktamova
{"title":"TYPE OF EXCESS CURRENT GENERATED IN TUNNEL DIODES AND BARRIER TRANSPARENCY COEFFICIENT (TRANSFER COEFFICIENT) IN DIFFERENT MODELS","authors":"G. Gulyamov, M. G. Dadamirzayev, M.K. Uktamova","doi":"10.37681/2181-1652-019-x-2021-3-5","DOIUrl":"https://doi.org/10.37681/2181-1652-019-x-2021-3-5","url":null,"abstract":"In this work, the transparency coefficient of the barrier formed in a tunnel diode was investigated by adding it as a variable in the Tsu - Esaki model. Also, the excess current generated in the tunnel diode was analyzed with the Chynowez model, based on th e theory of Knott and Demass. Based on the Franz -Keldesh model for various values of the electric field, the current - voltage characteristic of the tunnel diode was obtained from the change in the excess current of the tunnel diode","PeriodicalId":153395,"journal":{"name":"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132429329","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
FLEXOPHOTOVOLTAIC EFFECT IN SILICON p - n - STRUCTURES 硅p - n结构中的柔性光伏效应
SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS Pub Date : 2021-06-30 DOI: 10.37681/2181-1652-019-x-2021-3-10
R. Aliev, B. Rashidov, V. Abduazimov
{"title":"FLEXOPHOTOVOLTAIC EFFECT IN SILICON p - n - STRUCTURES","authors":"R. Aliev, B. Rashidov, V. Abduazimov","doi":"10.37681/2181-1652-019-x-2021-3-10","DOIUrl":"https://doi.org/10.37681/2181-1652-019-x-2021-3-10","url":null,"abstract":"In this article, the experimental analysis of possibility of use of deformation of a crystal lattice of silicon for increase of efficiency of photoelectric transformation of energy made . For the first time the flex - photovoltaic (FFV) effect in silicon p - n - structures found out at influence of local mechanical pressure on the frontal surface. Laws of display of FFV effect depending on size of local pressure force and intensity of photoexcitation defined. Statistical processing of experimenta l data by a metho d of the least squares is executed and the new empirical formula for experimentally certain of dependence of short circuit photocurrent of silicon structure on the local mechanical pressure created on frontal surface on various distances from a contact str ip is received","PeriodicalId":153395,"journal":{"name":"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116796181","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
NEW TYPES OF THERMAL ENERGY CONVERTERS BASED ON GRANULAR SILICON 基于颗粒硅的新型热能转换器
SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS Pub Date : 2021-06-30 DOI: 10.37681/2181-1652-019-x-2021-3-6
B. Abdurakhmanov, M. Adilov, X. B. Ashurov, M. Kurbanov
{"title":"NEW TYPES OF THERMAL ENERGY CONVERTERS BASED ON GRANULAR SILICON","authors":"B. Abdurakhmanov, M. Adilov, X. B. Ashurov, M. Kurbanov","doi":"10.37681/2181-1652-019-x-2021-3-6","DOIUrl":"https://doi.org/10.37681/2181-1652-019-x-2021-3-6","url":null,"abstract":"New types of thermal energy converters are described, the working fluid of which is made of granular silicon, which is a silicon powder, the particles of which are not sintered and are not fused with each other. In such a material, the Seebeck coefficient is much higher than in monocrystalline silicon with a lower thermal conductivity, which makes it possible to consider this modification of silicon as a promising thermoelectric material. Key words : thermal energy converter, granular silicon, Seebeck coeffi cient, concentrated solar radiation, tunneling of charge carriers","PeriodicalId":153395,"journal":{"name":"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131008318","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
TECHNOLOGICAL METHOD OF ERROSION - FREE DIFFUSION OF SILICON WITH IMPURITY ATOMS OF SULFUR 含硫杂质硅无腐蚀扩散的工艺方法
SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS Pub Date : 2021-06-30 DOI: 10.37681/2181-1652-019-x-2021-3-7
N. Zikrillaev, М.К. Ha kk ulov, F. Shakarov, S.Y. Ma kh mudov
{"title":"TECHNOLOGICAL METHOD OF ERROSION - FREE DIFFUSION OF SILICON WITH IMPURITY ATOMS OF SULFUR","authors":"N. Zikrillaev, М.К. Ha kk ulov, F. Shakarov, S.Y. Ma kh mudov","doi":"10.37681/2181-1652-019-x-2021-3-7","DOIUrl":"https://doi.org/10.37681/2181-1652-019-x-2021-3-7","url":null,"abstract":"A diffusion technology for doping silicon with impurity atoms of sulfur preventing surface erosion has been developed. The technology could be used to create relevant semiconductor devices. Controlling diffusant vapor pressure, diffusion time and temperatu re, it is possible to obtain silicon samples of both p - type conductivity and n - type doped with impurity atoms of sulfur. The developed technology is recommended for application in obtaining silicon doped with other diffusants, which, during diffusion, stro ngly interact with the original silicon, forming surface erosion","PeriodicalId":153395,"journal":{"name":"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS","volume":"237 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126125833","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
STRUCTURE FORMATION OF IMPURITY PRECIPITES NICKEL IN SILICON 硅中杂质析出物镍的结构形成
SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS Pub Date : 2021-06-30 DOI: 10.37681/2181-1652-019-x-2021-3-1
S. Zaynabidinov, N. Turgunov, E. Berkinov, R.M. Turmanova
{"title":"STRUCTURE FORMATION OF IMPURITY PRECIPITES NICKEL IN SILICON","authors":"S. Zaynabidinov, N. Turgunov, E. Berkinov, R.M. Turmanova","doi":"10.37681/2181-1652-019-x-2021-3-1","DOIUrl":"https://doi.org/10.37681/2181-1652-019-x-2021-3-1","url":null,"abstract":"In this study, using the method of electron probe analysis, the sequence of formation of various impurity precipitates of nickel in silicon in the process of diffusion doping at a temperature of T = 1573 K was investigated. The influence of the value of the cooling rate of the samples after diffusion annealing on the formation of impurity precipitates was considered. The morphological parameters of impurity precipitates of nickel in silicon have been revealed, and their chemical compositions have been determined. It was found that, depending on the size and shape, the nickel precipitates can have a single or multilayer structure","PeriodicalId":153395,"journal":{"name":"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS","volume":"84 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121887857","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
DEVICE FOR DETERMINING WATER CONTENT IN OIL AND PETROLEUM PRODUCTS 测定石油和石油产品中水分含量的装置
SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS Pub Date : 2021-06-30 DOI: 10.37681/2181-1652-019-x-2021-3-2
Kh. S. Daliev, O. Kuldashov, I.M. Boltaboev, G.A. Zhuraboeva
{"title":"DEVICE FOR DETERMINING WATER CONTENT IN OIL AND PETROLEUM PRODUCTS","authors":"Kh. S. Daliev, O. Kuldashov, I.M. Boltaboev, G.A. Zhuraboeva","doi":"10.37681/2181-1652-019-x-2021-3-2","DOIUrl":"https://doi.org/10.37681/2181-1652-019-x-2021-3-2","url":null,"abstract":"The article proposes a two - wave method for measuring the water content in oil and creates an optoelectronic device based on it. To develop this me thod, the absorption spectra of water were studied and it was shown that water strongly absorbs LED radiation at a wavelength of 1.95μm. An optoelectronic device has been developed for determining the water content in oil and oil products, which has high m easurement accuracy, sensitivity and safety","PeriodicalId":153395,"journal":{"name":"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128054949","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
STUDY OF THE INFLUENCE OF PROTON RADIATION ON THE FORMATION OF RADIATION DEFECTS IN DIFFUSION SILICON DIODES 质子辐射对扩散硅二极管辐射缺陷形成影响的研究
SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS Pub Date : 2021-06-30 DOI: 10.37681/2181-1652-019-x-2021-3-8
M. Tashmetov, S. Makhkamov, A. R. Sattiev, M. Erdonov, S. Makhmudov, Kh. M. Kholmedov
{"title":"STUDY OF THE INFLUENCE OF PROTON RADIATION ON THE FORMATION OF RADIATION DEFECTS IN DIFFUSION SILICON DIODES","authors":"M. Tashmetov, S. Makhkamov, A. R. Sattiev, M. Erdonov, S. Makhmudov, Kh. M. Kholmedov","doi":"10.37681/2181-1652-019-x-2021-3-8","DOIUrl":"https://doi.org/10.37681/2181-1652-019-x-2021-3-8","url":null,"abstract":"The results of a capacitive spectrometric study of the formation of radiation - defect complexes in diffusion silicon p + - n - n + structures under the action of 18.7 MeV protons are presented. It was found that for the A center after irradiation, the efficiency of RD formation in diffusion diodes with shallow depths of the p + layer has a nonmonotonic dependence and constitutes the main RD concentration. A mechanism is considered that explains the effect of the p + - layer depth in diffusion diodes on the defect fo rmation process.","PeriodicalId":153395,"journal":{"name":"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126766546","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
POSSIBILITIES OF NANOTECHNOLOGY IN SOLAR ENERGY 纳米技术在太阳能中的可能性
SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS Pub Date : 2021-06-30 DOI: 10.37681/2181-1652-019-x-2021-3-4
E. Imamov, R. Muminov, R. Rakhimov, T. A. Djalalov, A.E. Imamov
{"title":"POSSIBILITIES OF NANOTECHNOLOGY IN SOLAR ENERGY","authors":"E. Imamov, R. Muminov, R. Rakhimov, T. A. Djalalov, A.E. Imamov","doi":"10.37681/2181-1652-019-x-2021-3-4","DOIUrl":"https://doi.org/10.37681/2181-1652-019-x-2021-3-4","url":null,"abstract":"The development of applied aspects of the phenomenon of self - organization in solving the problem of improving the efficiency of solar converters is considered. It is proved that the creation of self -organized nano - sized semiconductor thermal contacts on t he surface of a solar cell can significantly improve the process of converting solar radiation into electricity . It is shown that such an improvement is carried out regardless of the degree of crystallinity of the substrate material. This makes it possible to use cheap and stably stable technical silicon as a substrate for solar cells, on the surface of which many nanoscale p - n junctions from another semiconductor material are created. It is proved that due to the manifestation of the physical effect of sel f - organization, almost ideal hetero structures with high crystal perfection and high uniformity are realized. The paper defines the cond itions under which contacting semiconductors will be able to form stable and photo - efficient hetero junctions. Keywords:semiconductor, the current - voltage characteristic of nanocluster","PeriodicalId":153395,"journal":{"name":"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133498673","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
TO THE THEORY OF THE TWO AND THREE PHOTONIC LINEAR CIRCULAR DICHROISMS IN CUBIC SYMMETRY SEMICONDUCTORS 立方对称半导体中二光子和三光子线性圆二色性的理论
SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS Pub Date : 2021-06-30 DOI: 10.37681/2181-1652-019-x-2021-3-9
V. Rasulov, R. Rasulov, I. Eshboltaev, M. X. Kuchkarov
{"title":"TO THE THEORY OF THE TWO AND THREE PHOTONIC LINEAR CIRCULAR DICHROISMS IN CUBIC SYMMETRY SEMICONDUCTORS","authors":"V. Rasulov, R. Rasulov, I. Eshboltaev, M. X. Kuchkarov","doi":"10.37681/2181-1652-019-x-2021-3-9","DOIUrl":"https://doi.org/10.37681/2181-1652-019-x-2021-3-9","url":null,"abstract":"The linear - circular dichroism of two and three photon absorption of light in semiconductors of cubic symmetry of hole conductivity is theoretically investigated. The matrix elements of two and three - photon optical transitions occurring between the subbands of the semiconductor valence band are calculated. In this case, transitions associated with both non - simultaneous absorption of individual photons and simultaneous absorption of two photons are taken into account, and the spectral and temperature dependences of the coefficient of two and three - photon absorption of polarized radiation are determined","PeriodicalId":153395,"journal":{"name":"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125484017","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
METHOD OF PREVENTING CONTAMINATION OF THE SURFACE OF PHOTOVOLTAIC CELLS 防止光伏电池表面污染的方法
SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS Pub Date : 2021-04-30 DOI: 10.37681/2181-1652-019-x-2021-2-11
B. A. Yuldoshov
{"title":"METHOD OF PREVENTING CONTAMINATION OF THE SURFACE OF PHOTOVOLTAIC CELLS","authors":"B. A. Yuldoshov","doi":"10.37681/2181-1652-019-x-2021-2-11","DOIUrl":"https://doi.org/10.37681/2181-1652-019-x-2021-2-11","url":null,"abstract":"The paper considers the mechanisms of pol lution and deposition on the surface of photovoltaic batteries (PVB) in various conditions of the seasons and incidence angles from the degree of surface treatment of photovoltaic cells of the PVB and the size of the dust particles. Experimental results were obtained on the influence of the degree of pollution of the surface of the PVB from the time of day, and it is shown that closi ng the surface of the PVB at night before sunrise leads to a significant reduction in the surface pollution of PVB","PeriodicalId":153395,"journal":{"name":"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS","volume":"21 6","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132532465","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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