N. Zikrillaev, М.К. Ha kk ulov, F. Shakarov, S.Y. Ma kh mudov
{"title":"含硫杂质硅无腐蚀扩散的工艺方法","authors":"N. Zikrillaev, М.К. Ha kk ulov, F. Shakarov, S.Y. Ma kh mudov","doi":"10.37681/2181-1652-019-x-2021-3-7","DOIUrl":null,"url":null,"abstract":"A diffusion technology for doping silicon with impurity atoms of sulfur preventing surface erosion has been developed. The technology could be used to create relevant semiconductor devices. Controlling diffusant vapor pressure, diffusion time and temperatu re, it is possible to obtain silicon samples of both p - type conductivity and n - type doped with impurity atoms of sulfur. The developed technology is recommended for application in obtaining silicon doped with other diffusants, which, during diffusion, stro ngly interact with the original silicon, forming surface erosion","PeriodicalId":153395,"journal":{"name":"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS","volume":"237 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"TECHNOLOGICAL METHOD OF ERROSION - FREE DIFFUSION OF SILICON WITH IMPURITY ATOMS OF SULFUR\",\"authors\":\"N. Zikrillaev, М.К. Ha kk ulov, F. Shakarov, S.Y. Ma kh mudov\",\"doi\":\"10.37681/2181-1652-019-x-2021-3-7\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A diffusion technology for doping silicon with impurity atoms of sulfur preventing surface erosion has been developed. The technology could be used to create relevant semiconductor devices. Controlling diffusant vapor pressure, diffusion time and temperatu re, it is possible to obtain silicon samples of both p - type conductivity and n - type doped with impurity atoms of sulfur. The developed technology is recommended for application in obtaining silicon doped with other diffusants, which, during diffusion, stro ngly interact with the original silicon, forming surface erosion\",\"PeriodicalId\":153395,\"journal\":{\"name\":\"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS\",\"volume\":\"237 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-06-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.37681/2181-1652-019-x-2021-3-7\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.37681/2181-1652-019-x-2021-3-7","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
TECHNOLOGICAL METHOD OF ERROSION - FREE DIFFUSION OF SILICON WITH IMPURITY ATOMS OF SULFUR
A diffusion technology for doping silicon with impurity atoms of sulfur preventing surface erosion has been developed. The technology could be used to create relevant semiconductor devices. Controlling diffusant vapor pressure, diffusion time and temperatu re, it is possible to obtain silicon samples of both p - type conductivity and n - type doped with impurity atoms of sulfur. The developed technology is recommended for application in obtaining silicon doped with other diffusants, which, during diffusion, stro ngly interact with the original silicon, forming surface erosion
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