M. Tashmetov, S. Makhkamov, A. R. Sattiev, M. Erdonov, S. Makhmudov, Kh. M. Kholmedov
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引用次数: 0
摘要
本文介绍了在18.7 MeV质子作用下扩散硅p + - n - n +结构中辐射缺陷配合物形成的电容光谱研究结果。研究发现，对于辐照后的A中心，p +层深度较浅的扩散二极管的RD形成效率具有非单调依赖性，并构成主要的RD浓度。探讨了扩散二极管中p +层深度对缺陷形成过程影响的机理。
STUDY OF THE INFLUENCE OF PROTON RADIATION ON THE FORMATION OF RADIATION DEFECTS IN DIFFUSION SILICON DIODES
The results of a capacitive spectrometric study of the formation of radiation - defect complexes in diffusion silicon p + - n - n + structures under the action of 18.7 MeV protons are presented. It was found that for the A center after irradiation, the efficiency of RD formation in diffusion diodes with shallow depths of the p + layer has a nonmonotonic dependence and constitutes the main RD concentration. A mechanism is considered that explains the effect of the p + - layer depth in diffusion diodes on the defect fo rmation process.
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