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Design of a low EMI boost converter using bi-frequency PFM control mode 采用双频PFM控制模式的低EMI升压变换器的设计
2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI: 10.1109/ISNE.2015.7131966
Cheng'en Wu, Changyuan Chang, Yan Zhang, Junjie Hu, Yao Chen
{"title":"Design of a low EMI boost converter using bi-frequency PFM control mode","authors":"Cheng'en Wu, Changyuan Chang, Yan Zhang, Junjie Hu, Yao Chen","doi":"10.1109/ISNE.2015.7131966","DOIUrl":"https://doi.org/10.1109/ISNE.2015.7131966","url":null,"abstract":"A bi-frequency PFM controlled boost DC-DC converter is designed and implemented in this paper to improve the electro-magnetic interference (EMI) and efficiency of the system in a wide load range. The spectral energy of proposed bi-frequency PFM controlled converter is distributed to more frequency points to decrease the discrete harmonic peak, achieving low EMI. A control IC for the boost converter has been fabricated in Founder Microelectronics 0.5μm CMOS process. Experimental results show that the full-load conversion efficiency is over 80%, and the converter has fine EMI characteristics.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116112245","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Electrodeposition of diamond-like carbon thin film on conductive indium-tin-oxide glass substrate 导电氧化铟锡玻璃基板上类金刚石碳薄膜的电沉积
2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI: 10.1109/ISNE.2015.7131998
Ching-Tsang Chang, Yi-Tsung Chang, Yun-Jhung Chih, H. Ueng
{"title":"Electrodeposition of diamond-like carbon thin film on conductive indium-tin-oxide glass substrate","authors":"Ching-Tsang Chang, Yi-Tsung Chang, Yun-Jhung Chih, H. Ueng","doi":"10.1109/ISNE.2015.7131998","DOIUrl":"https://doi.org/10.1109/ISNE.2015.7131998","url":null,"abstract":"This paper presents electrodeposition of diamond-like carbon (DLC) thin film deposits on indium tin oxide (ITO) glass substrate under voltage 2.1V~120V with mixing varying acetic acids' portions with deionized water, forming 0.2~0.8% electrolytic solutions. The result shows that at deposition temperature 30°~65°, voltage 50V and 0.8% electrolytic solution concentration of DLC thin films, the reflection index reduced to 60%, and theoretical matching refractive index became 1.32. This finding is applicable on various optoelectronic device like protective or window layer of solar cell.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127905786","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Frequency-quadrupling microwave signal generation based on Brillouin-assisted optical notch filter 基于布里渊辅助光学陷波滤波器的四倍频微波信号生成
2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI: 10.1109/ISNE.2015.7132000
Wen Ting Wang, Qi Wang, W. Sun, Wen Wang, Youwan Tong, Jian Guo Liu, N. Zhu
{"title":"Frequency-quadrupling microwave signal generation based on Brillouin-assisted optical notch filter","authors":"Wen Ting Wang, Qi Wang, W. Sun, Wen Wang, Youwan Tong, Jian Guo Liu, N. Zhu","doi":"10.1109/ISNE.2015.7132000","DOIUrl":"https://doi.org/10.1109/ISNE.2015.7132000","url":null,"abstract":"A novel technique to generate frequency quadrupling microwave signal is proposed and experimentally demonstrated based on a Brillouin-assisted optical notch filter (BAOF). The intensity modulated optical signal is firstly working at the maximum transmission point to suppress the first order sidebands. Microwave signals at the frequency corresponding to four times of the fundamental tone are successfully generated.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":" 5","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132041592","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Multi-state resistance switching and variability analysis of HfOx based RRAM for ultra-high density memory applications 超高密度存储器中基于HfOx的RRAM多态电阻开关及可变性分析
2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI: 10.1109/ISNE.2015.7132027
A. Prakash, J. Park, J. Song, S.J. Lim, J.-H Park, J. Woo, E. Cha, H. Hwang
{"title":"Multi-state resistance switching and variability analysis of HfOx based RRAM for ultra-high density memory applications","authors":"A. Prakash, J. Park, J. Song, S.J. Lim, J.-H Park, J. Woo, E. Cha, H. Hwang","doi":"10.1109/ISNE.2015.7132027","DOIUrl":"https://doi.org/10.1109/ISNE.2015.7132027","url":null,"abstract":"In this study, we have investigated the multi-level cell (MLC) characteristics and variability analysis of multiple resistance states of one of the most promising and extensively studied binary oxide (HfOx) based nanometer scale RRAM stack by varying the switching current. The device size and thickness of stack layers were confirmed by transmission electron microscope (TEM) images. In the CMOS friendly stack with TiN/Ti/HfOx/TiN structure, 3 distinct levels of low resistance states (LRS) with same high resistance state (HRS) were successfully obtained which can be used in 2-bit per cell storage. It was found that the switching variability was the strong function of the number of defects in the filament or the switching current (IC) and it significantly improved at higher IC. All the resistance levels show good inter switching ability and reliability characteristics such as read disturb immunity, read pulse endurance (>108 times) and data retention.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":" 7","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132124812","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
Design of a single-input fuzzy PID controller based on genetic optimization scheme for DC-DC buck converter 基于遗传优化的DC-DC降压变换器单输入模糊PID控制器设计
2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI: 10.1109/ISNE.2015.7131965
Yubo Yuan, Changyuan Chang, Zhiqi Zhou, Xiaomin Huang, Yang Xu
{"title":"Design of a single-input fuzzy PID controller based on genetic optimization scheme for DC-DC buck converter","authors":"Yubo Yuan, Changyuan Chang, Zhiqi Zhou, Xiaomin Huang, Yang Xu","doi":"10.1109/ISNE.2015.7131965","DOIUrl":"https://doi.org/10.1109/ISNE.2015.7131965","url":null,"abstract":"A single-input fuzzy PID (SIF-PID) controller is proposed in this paper to improve the dynamic performance of dc-dc buck converter. The fuzzy logic adjusts the three parameters of PID controller adaptively by detecting the output voltage. Establishment of double-input rule table with Toeplitz structure is presented by analysising the system response curve. One-dimension rule vectors are derived based on the slope λ of the parallel diagonal lines in rule table to reduce the computational burden. The genetic algorithm is utilized to optimize the coefficient λ to guarantee the simplified rule vectors are equivalent to the original rule table in terms of control performance. Effectiveness of the proposed controller is validated by simulation results.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"98 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131803565","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 18
Evaluation of electrical performance of various tunnel TFETs 各种隧道tfet的电性能评价
2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI: 10.1109/ISNE.2015.7132032
C. Huang, Tao-Yi Hung, Pei-Yu Wang, B. Tsui
{"title":"Evaluation of electrical performance of various tunnel TFETs","authors":"C. Huang, Tao-Yi Hung, Pei-Yu Wang, B. Tsui","doi":"10.1109/ISNE.2015.7132032","DOIUrl":"https://doi.org/10.1109/ISNE.2015.7132032","url":null,"abstract":"Tunnel field-effect transistor (TFET) is a promising device which has extraordinary performance on subthreshold swing and is feasible for ultralow power applications. However, one of the main factors of power dissipation and circuit delay among different designs of TFET, namely, parasitic capacitances, has not been discussed in detail. In this paper, parasitic capacitance of various types of TFETs are simulate and analyze.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131811650","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 2.4-GHz fractional-N frequency synthesizer with noise filtering technique for wireless application 一种采用噪声滤波技术的2.4 ghz分数n频率合成器
2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI: 10.1109/ISNE.2015.7131995
Jhin-Fang Huang, W. Lai, C. Fu
{"title":"A 2.4-GHz fractional-N frequency synthesizer with noise filtering technique for wireless application","authors":"Jhin-Fang Huang, W. Lai, C. Fu","doi":"10.1109/ISNE.2015.7131995","DOIUrl":"https://doi.org/10.1109/ISNE.2015.7131995","url":null,"abstract":"A hybrid fractional-N frequency synthesizer with noise filtering technique for wireless application is implemented with TSMC 0.18 μm CMOS process. In order to reduce the effects of high order delta-sigma modulator (Δ Σ M), and suppress the out-of-band quantization noise, a noise filter is adopted. An integer-N phase-locked loop acts as the noise filter in the feedback path of a fractional-N frequency synthesizer. With supply voltages of 0.9 V for analog circuits and 1.8 V for digital circuits, measured results achieve that output frequency of VCO is tunable from 2.30 to 2.52 GHz, corresponding to 9.1%, a frequency synthesizer phase noise of -113.51 dBc/Hz at 1 MHz offset from carrier frequency of 2.41 GHz, and a overall power consumption of 20 mW. Including pads, the total chip area occupies 0.922 (0.94 × 0.98) mm2.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132834390","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Design, optimization and fabrication of two-dimension high contrast subwavelength grating (HCG) mirror on Silicon-on-insulator 基于绝缘体上硅的二维高对比度亚波长光栅(HCG)反射镜的设计、优化与制造
2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI: 10.1109/ISNE.2015.7132036
Shen-Che Huang, Qiangsheng Huang, K. Ma, Jianhao Zhang, Yaocheng Shi, D. Dai, T. Lu, Sailing He
{"title":"Design, optimization and fabrication of two-dimension high contrast subwavelength grating (HCG) mirror on Silicon-on-insulator","authors":"Shen-Che Huang, Qiangsheng Huang, K. Ma, Jianhao Zhang, Yaocheng Shi, D. Dai, T. Lu, Sailing He","doi":"10.1109/ISNE.2015.7132036","DOIUrl":"https://doi.org/10.1109/ISNE.2015.7132036","url":null,"abstract":"The high contrast grating (HCG) mirror has been illustrated and characterized. The investigated parameters including grating periods and filling factors were calculated by finite-difference time-domain method. The two-dimension HCG was fabricated by electron-beam lithography and inductively coupled plasma process. The reflectivity of the fabricated HCG mirror was measured, resulting in around 200 nm bandwidth. The measured result also showed a good agreement with calculated one. This achievement was promising in developing the novel light emitters in the telecommunication region.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127193714","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Influences of drain side P+ discrete-islands on ESD robustness in the 60-V pLDMOS-SCR ("PNPNP" arranged-type) 漏侧P+离散岛对60v pLDMOS-SCR ESD稳健性的影响(“PNPNP”排列型)
2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI: 10.1109/ISNE.2015.7132029
Shen-Li Chen, Yu-Ting Huang, Shawn Chang, Shun-Bao Chang
{"title":"Influences of drain side P+ discrete-islands on ESD robustness in the 60-V pLDMOS-SCR (\"PNPNP\" arranged-type)","authors":"Shen-Li Chen, Yu-Ting Huang, Shawn Chang, Shun-Bao Chang","doi":"10.1109/ISNE.2015.7132029","DOIUrl":"https://doi.org/10.1109/ISNE.2015.7132029","url":null,"abstract":"How to effectively enhance the reliability robustness in high-voltage BCD processes is an important issue. A p-channel lateral-diffused MOSFET with an embedded SCR which is formed by implanting N<sup>+</sup> doses in the drain side and divided into five regions, this structure called as the \"pnpnp\" arranged-type of pLDMOS-SCR in this paper (diffusion regions of the drain side is P<sup>+</sup>-N<sup>+</sup>-P<sup>+</sup>-N<sup>+</sup>-P<sup>+</sup>). Then, altering the layout topology of N<sup>+</sup> implants in a drain-side P<sup>+</sup> region is evaluated in this paper by a 0.25-μm 60-V BCD process. In this planning idea, the layout manners of P<sup>+</sup> region are discrete-islands in the drain-end. From the experimental results, due to all of their secondary breakdown current (I<sub>t2</sub>) values are so good reached above 6 A, it can be found that the layout manner of discrete-island distributions in the drain-side have some impacts on the anti-ESD and latch-up immunities. However, the major repercussion is the V<sub>h</sub> value will be decreased about 66.7% ~ 73.7%.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"111 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133068405","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Synthesis of CuInS2-ZnS quantum dots for different Cu/In ratios by one-pot method and its applications to white light-emitting diodes 一锅法合成不同Cu/In比的CuInS2-ZnS量子点及其在白光发光二极管中的应用
2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI: 10.1109/ISNE.2015.7132043
You-Cheng Lin, Jun-Wei Lai, S. Shei
{"title":"Synthesis of CuInS2-ZnS quantum dots for different Cu/In ratios by one-pot method and its applications to white light-emitting diodes","authors":"You-Cheng Lin, Jun-Wei Lai, S. Shei","doi":"10.1109/ISNE.2015.7132043","DOIUrl":"https://doi.org/10.1109/ISNE.2015.7132043","url":null,"abstract":"This paper reports one-pot method toward the synthesis of CuInS2/ZnS hybrid nanoparticles. First, CuInS2 quantum dots (QDs) were synthesized in the noncoordinating solvent octadecene using copper chlorine, indium chlorine and dodecanethiol. Copper indium sulfide (CIS) quantum dots (QDs) for different Cu/In molar ratios of 1/1, 1/2, and 1/4 are synthesized. The band gap energy of CIS QDs is observed to be dependent for Cu/In ratio, exhibiting a higher band gap from more Cu-deficient QDs. The emission wavelengths of all CIS QDs belong to a deep red region (710-780 nm) with relatively low quantum yields (QYs) of 3.4-7.8%. Compared to respective original core QDs, the absorption peaks of CIS/ZnS QDs are blue-shifted, and their emission wavelengths move to a higher energy accordingly, showing a quite tunable emission from yellow to red. The effective surface passivation by a ZnS overlayer results in a dramatic increase in QY of CIS/ZnS QDs in the range of 38-48%. Finally, high luminescent CIS/ZnS QDs with high luminescent PL efficiency are used for white light emitting diode.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"127 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114856953","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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