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2015 International Symposium on Next-Generation Electronics (ISNE)最新文献

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Study of low cost mobile phone tracking system 低成本手机跟踪系统的研究
2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI: 10.1109/ISNE.2015.7132023
Jung-Shiuan Hunag, R. Harwahyu, R. Cheng
{"title":"Study of low cost mobile phone tracking system","authors":"Jung-Shiuan Hunag, R. Harwahyu, R. Cheng","doi":"10.1109/ISNE.2015.7132023","DOIUrl":"https://doi.org/10.1109/ISNE.2015.7132023","url":null,"abstract":"The ability to provide handset tracking or positioning system independent from the available commercial mobile network is required in emergency. In some cases, it is possible that the commercial mobile networks are suspended due to the natural disaster, terrorist attack or other emergency condition. The commercial mobile networks might also unavailable in the remote areas where some extreme sports or research exploration take place. During emergency evacuation, detecting handset location might be a big help for the rescue team to loacte the victim. This work analyzes the system architecture of OpenBTS and AirProbe GSM-Receiver, and proposed a way to achieve affordable mobile phone positioning with these open source platform. The target is to build a cost-effective prototype which able to detect handset position more precisely. An effective approach to increase the positioning accuracy is also presented. The result from this paper can be used as a reference of how to develop a cost effective mobile positioning system.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132297542","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Realization of tunable microsphere resonators suspended in liquid via dielectrophoretic force 利用介电泳力实现悬浮在液体中的可调谐微球谐振器
2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI: 10.1109/ISNE.2015.7132037
Te-Chang Chen, Tse-Jen Liao, Ming-Chang M. Lee
{"title":"Realization of tunable microsphere resonators suspended in liquid via dielectrophoretic force","authors":"Te-Chang Chen, Tse-Jen Liao, Ming-Chang M. Lee","doi":"10.1109/ISNE.2015.7132037","DOIUrl":"https://doi.org/10.1109/ISNE.2015.7132037","url":null,"abstract":"A new control mechanism to realize tunable microsphere resonators suspended in liquid is proposed. Via adjusting the bias voltage across an inhomogeneous dielectric structure (a rib waveguide plus microsphere), the microsphere resonator is attracted and levitated on top of the single-mode rib waveguide via an repulsive dielectrophoretic (DEP) force, where the coupling gap between the microsphere resonator and the waveguide is precisely controlled. The tunable gap spacing is analyzed by calculating the dielectrophoretic force through Maxwell stress tensor.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131620754","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fast and low-temperature sputtering epitaxy of Si and Ge and its application to optoelectronics Si和Ge的快速低温溅射外延及其在光电子学中的应用
2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI: 10.1109/ISNE.2015.7132040
W. Yeh, M. Matsumoto, K. Sugihara
{"title":"Fast and low-temperature sputtering epitaxy of Si and Ge and its application to optoelectronics","authors":"W. Yeh, M. Matsumoto, K. Sugihara","doi":"10.1109/ISNE.2015.7132040","DOIUrl":"https://doi.org/10.1109/ISNE.2015.7132040","url":null,"abstract":"Novel Si/SiGex-Ge multi-junction solar cell structure was proposed, and pin junction Ge solar cell was fabricated on Ge substrate by sputter epitaxy for the first time, in which growth temperature was under 360°C and growth rates was ~2 nm/s. Internal quantum efficiency at infrared wavelength was as high as 76%, with an open circuit voltage of 0.15V.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131839422","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An embedded system with realtime surveillance application 嵌入式实时监控系统
2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI: 10.1109/ISNE.2015.7132031
Y. Tseng, Chong-Yu Liao, T. Hung
{"title":"An embedded system with realtime surveillance application","authors":"Y. Tseng, Chong-Yu Liao, T. Hung","doi":"10.1109/ISNE.2015.7132031","DOIUrl":"https://doi.org/10.1109/ISNE.2015.7132031","url":null,"abstract":"To reduce the manpower and response time for surveillance systems at low cost, in this paper, an ARM-based embedded system dedicated for unattended realtime moving target detection is constructed. The comprehensive procedures in building up an embedded system such as setup environment for cross-compilation, migration of Bootloader, migration of Linux-2.6 kernel, fabrication and migration of root document system and setup of peripheral driving devices have been presented. The algorithm of image background subtraction for moving target detection and tracking technology has been presented. In this embedded system, for two consecutive 640×480 image frames captured by camera, if the difference of 8-bit gray level value of a pixel at the same position is greater than 32, that pixel is marked as a “moving pixel”. When there are more than 500 moving pixels in two consecutive image frames, the camera is triggered to take pictures because the system assumes that a moving “invader” appears. Consequently, the system will transfer the taken invader's pictures to “The Cloud” through WiFi to prevent the pictures being destroyed by the invader. The constructed embedded system can be used in a security system and other applications with proper modifications.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132008518","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Design of III-V/silicon hybrid surface-emitting laser with grating structure 具有光栅结构的III-V/硅混合表面发射激光器设计
2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI: 10.1109/ISNE.2015.7131945
Jen-Hung Huang, Bai-Ci Chen, Yu-Chang Wu, C. Lin
{"title":"Design of III-V/silicon hybrid surface-emitting laser with grating structure","authors":"Jen-Hung Huang, Bai-Ci Chen, Yu-Chang Wu, C. Lin","doi":"10.1109/ISNE.2015.7131945","DOIUrl":"https://doi.org/10.1109/ISNE.2015.7131945","url":null,"abstract":"The VCSEL consisting of the HCG mirror, an active layer with InGaAsP quantum wells having optical gain around 1.31 μm and a TiO<sub>2</sub>/SiO<sub>2</sub> DBR is designed. Small threshold gain can be theoretically gotten by adjusting the thickness of BCB layer and N-InP layer.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"135 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114822783","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Broadband tunable laser and high-brightness light sources 宽带可调谐激光器和高亮度光源
2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI: 10.1109/ISNE.2015.7132008
D. Jheng, Shih-Chang Wang, T. Ho, Yang, K. Hsu, Sheng-Lung Huang
{"title":"Broadband tunable laser and high-brightness light sources","authors":"D. Jheng, Shih-Chang Wang, T. Ho, Yang, K. Hsu, Sheng-Lung Huang","doi":"10.1109/ISNE.2015.7132008","DOIUrl":"https://doi.org/10.1109/ISNE.2015.7132008","url":null,"abstract":"Doped single crystalline fibers are efficient and broadband gain media for lasers, as well as cw and high-brightness emissions. Various crystal fibers based broadband tunable laser and emissions centered from blue to near infrared will be addressed. A Cr4+:YAG crystal fiber laser tunable from 1353 to 1509 nm with a threshold pump power of 70 mW will be discussed as an example.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"107 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121959706","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Experimental demonstration of L band single longitude mode tunable fiber laser L波段单经模可调谐光纤激光器的实验演示
2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI: 10.1109/ISNE.2015.7131973
Yin-Wen Lee, Jiun-Shin Chang, S. Liaw, Wen-Fang Wu
{"title":"Experimental demonstration of L band single longitude mode tunable fiber laser","authors":"Yin-Wen Lee, Jiun-Shin Chang, S. Liaw, Wen-Fang Wu","doi":"10.1109/ISNE.2015.7131973","DOIUrl":"https://doi.org/10.1109/ISNE.2015.7131973","url":null,"abstract":"Single-longitudinal-mode (SLM) wavelength-tunable fiber lasers are extensively explored both in science and industry because of the applications in optical switching, network protection, instrument testing, optical sensors, and medical applications. In this paper, we present tunable SLM linear-cavity fiber lasers from design to experimental investigation.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115200344","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Mirror-assisted interdigitated back-contact CMOS photovoltaic devices for powering subcutaneous implantable devices 用于为皮下植入式装置供电的镜辅助交叉指间背接触CMOS光电器件
2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI: 10.1109/ISNE.2015.7131993
Jia-Fa Chen, C. Chun, Y. Hung
{"title":"Mirror-assisted interdigitated back-contact CMOS photovoltaic devices for powering subcutaneous implantable devices","authors":"Jia-Fa Chen, C. Chun, Y. Hung","doi":"10.1109/ISNE.2015.7131993","DOIUrl":"https://doi.org/10.1109/ISNE.2015.7131993","url":null,"abstract":"Enhanced photocurrent generation in CMOS back-contact photovoltaic devices is experimentally demonstrated in this work by utilizing multilevel metals in standard bulk CMOS to simultaneously achieve uniform series resistance of devices and high optical reflection from back metal mirrors, thus boosting the device efficiency to 18.05 and 20.33% for fingerand leaf-type junction designs, respectively, under 980-nm illumination.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127603696","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Modeling and simulation of piezoelectric based micro cantilever systems for Prostate Specific Antigen 前列腺特异性抗原压电微悬臂系统的建模与仿真
2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI: 10.1109/ISNE.2015.7131950
Raghav Gupta, S. Swaminathan
{"title":"Modeling and simulation of piezoelectric based micro cantilever systems for Prostate Specific Antigen","authors":"Raghav Gupta, S. Swaminathan","doi":"10.1109/ISNE.2015.7131950","DOIUrl":"https://doi.org/10.1109/ISNE.2015.7131950","url":null,"abstract":"This work proposes a novel compact piezoelectric (PZT) microcantilever transducer model using COMSOL Multiphysics for detection of Prostate Cancer. Prostate Specific Antigen (PSA) level detection is done via Transport of Diluted Species and Laminar flow physics module. Reaction between PSA Antigen and its protein Antibody takes place on cantilever surface, which influence the mechanical displacement and the piezo voltage. Analysis of the model indicate high sensitivity in the PZT voltage for changes in PSA concentration.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"118 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123219376","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
A dual-band CMOS power amplifier at 1.8 GHz and 2.6 GHz for LTE applications 用于LTE应用的1.8 GHz和2.6 GHz双频CMOS功率放大器
2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI: 10.1109/ISNE.2015.7131970
Guan-Yu Pan, Jeng-Rern Yang
{"title":"A dual-band CMOS power amplifier at 1.8 GHz and 2.6 GHz for LTE applications","authors":"Guan-Yu Pan, Jeng-Rern Yang","doi":"10.1109/ISNE.2015.7131970","DOIUrl":"https://doi.org/10.1109/ISNE.2015.7131970","url":null,"abstract":"This paper presents a dual-band power amplifier (PA) for LTE applications at 1.8 GHz and 2.6GHz in TSMC 0.18 μm CMOS technology. The proposed PA consists of a two-stage cascode structure comprising a driver stage and power stage. The driver stage employs a RC feedback and resistive feedback. The feedback technique is used to improve the bandwidth. The power stage employs a diode linearizer help to enhance linearity. The simulation results indicated that the PA exhibited an average power gain of 21 dB, an input return loss (S11) less than -18 dB, the output power is about 24.8/23 dBm, and power added efficiency (PAE) is about 35/33 % at 1.8/2.6 GHz. The power consumption is 211 mW at an operation voltage of 3.3V.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"211 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124741832","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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