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2015 International Symposium on Next-Generation Electronics (ISNE)最新文献

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Electrical performance of dense and isolated n-type FinFETs in micro-loading effect 微负载效应下密集隔离n型finfet的电学性能
2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-06-25 DOI: 10.1109/ISNE.2015.7131985
Mu-Chun Wang, Jian-Liang Lin, D. Jhuang, W. Liao, Yi-De Lai, W. Lan, Shea-Jue Wang
{"title":"Electrical performance of dense and isolated n-type FinFETs in micro-loading effect","authors":"Mu-Chun Wang, Jian-Liang Lin, D. Jhuang, W. Liao, Yi-De Lai, W. Lan, Shea-Jue Wang","doi":"10.1109/ISNE.2015.7131985","DOIUrl":"https://doi.org/10.1109/ISNE.2015.7131985","url":null,"abstract":"The micro-loading effect in this work seems obviously. According to the extraction of drive current (IDS) for dense and isolated FinFET devices at the on-drawn layout (W/L=0.11/0.5 (μm/μm), the ratio with 11-fin fingers vs. single fin was 10.01. Using the re-work concept to derive the un-etching depth (ΔH) located at the inner sidewall fin height was still around 2.4 nm as the outer sidewall height (Hfin) was 90 nm.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"2013 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127430110","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Combined influence of intrapulse Raman scattering and self-steepening effect on soliton interaction in 160 Gbps system 脉冲内拉曼散射和自陡化效应对160 Gbps系统孤子相互作用的综合影响
2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-06-25 DOI: 10.1109/ISNE.2015.7131990
Bhupeshwaran Mani, A. Jawahar, K. Chitra, A. Sivasubramanian
{"title":"Combined influence of intrapulse Raman scattering and self-steepening effect on soliton interaction in 160 Gbps system","authors":"Bhupeshwaran Mani, A. Jawahar, K. Chitra, A. Sivasubramanian","doi":"10.1109/ISNE.2015.7131990","DOIUrl":"https://doi.org/10.1109/ISNE.2015.7131990","url":null,"abstract":"Here, we study the influence of Intra pulse Raman Scattering (IRS) and Self-Steepening (SS) effects on in-phase soliton pulses in 160 Gbps telecommunication system. With the initial spacing between soliton pulses chosen to be qo=5.28, the characteristics feature of soliton interaction is studied numerically by Perturbation theory. Secondly, the effect of higher order effects in shifting the soliton temporally is studied using Method of Moments. Finally the temporal shift caused by these higher order effects (Intrapulse Raman Scattering and Self Steepening) in preventing the soliton interaction at respective Interaction point (Ip) is realized in 160 Gbps telecommunication system and the results are characterized in terms of Q-factor.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128890018","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Field emission of electrochemical graphene oxide 电化学氧化石墨烯的场发射
2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-06-25 DOI: 10.1109/ISNE.2015.7131994
Yi-Tsung Chang, Yun-Jhung Chih, B. Lin, C. Chen
{"title":"Field emission of electrochemical graphene oxide","authors":"Yi-Tsung Chang, Yun-Jhung Chih, B. Lin, C. Chen","doi":"10.1109/ISNE.2015.7131994","DOIUrl":"https://doi.org/10.1109/ISNE.2015.7131994","url":null,"abstract":"Field emission device of graphene oxide (GO) with parallel plate-type structure was successfully produced with highly oriented pyrolytic graphite (HOPG) by electrochemical exfoliation. The material, chemical characteristics and material surface structure were analyzed with Raman spectroscopy, XRD, SEM and XPS as well. The best field emission enhancement factor β is 1878.5, and the turn-on field defined current equals to 1μA, max emission current are 3.73V/μm and 12μA, respectively. GO is a good candidate for field emission device.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125868885","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Orthogonal polarization modulation based fully coherent self-heterodyne detection for future UDWDM-PON 基于正交偏振调制的未来UDWDM-PON全相干自外差检测
2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-06-25 DOI: 10.1109/ISNE.2015.7132006
Jianyu Zheng, W. Sun, Weiyu Wang, Jianguo Liu, N. Zhu, G. Chang
{"title":"Orthogonal polarization modulation based fully coherent self-heterodyne detection for future UDWDM-PON","authors":"Jianyu Zheng, W. Sun, Weiyu Wang, Jianguo Liu, N. Zhu, G. Chang","doi":"10.1109/ISNE.2015.7132006","DOIUrl":"https://doi.org/10.1109/ISNE.2015.7132006","url":null,"abstract":"A fully coherent optical communication link using orthogonal polarization modulation based self-heterodyne detection is proposed and experimentally demonstrated where the local oscillator optical source and phase estimation algorithm need not be employed at the receiver. OPM based self-heterodyne detection scheme for fully coherent optical communication link was proposed and experimentally demonstrated.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"80 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124122041","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Progress of AlGaInP red laser diodes and beyond AlGaInP红色激光二极管及其他领域的研究进展
2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-06-25 DOI: 10.1109/ISNE.2015.7132013
H. Hamada
{"title":"Progress of AlGaInP red laser diodes and beyond","authors":"H. Hamada","doi":"10.1109/ISNE.2015.7132013","DOIUrl":"https://doi.org/10.1109/ISNE.2015.7132013","url":null,"abstract":"High-performance AlGaInP red laser diodes (LDs) and light emitting diodes (LEDs) play a key role in the light sources for displays, sensors, medicals, plants, and optical information areas. AlGaInP crystals grown by metal organic chemical vapor deposition method have to solve many issues such as band gap narrowing, low p-carrier concentration, 2-dimentional crystal growth, and hillocks on the crystal surface. We found an innovative solution that introduces (100) GaAs substrates with misorientation towards the [011] direction at the world-first in 1988. This paper presents about development history of AlGaInP laser diodes, some merits by using the substrate, and high performances laser diodes, which are fabricated by combining the substrates and strain compensated multiple quantum wells.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121928751","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Study of temperature- and time-resolved luminescence of CuInS2-ZnS quantum dots synthesized by one-pot method 一锅法合成CuInS2-ZnS量子点的温度分辨和时间分辨发光研究
2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI: 10.1109/ISNE.2015.7131954
Wen-Jui Chiang, S. Shei, Lung-Wei Huang
{"title":"Study of temperature- and time-resolved luminescence of CuInS2-ZnS quantum dots synthesized by one-pot method","authors":"Wen-Jui Chiang, S. Shei, Lung-Wei Huang","doi":"10.1109/ISNE.2015.7131954","DOIUrl":"https://doi.org/10.1109/ISNE.2015.7131954","url":null,"abstract":"This paper reports a simple route for the synthesis of CuInS2/ZnS quantum dots (QDs) using a one-pot method. First, the CuInS2 core QDs were synthesized in the non-coordinating octadecene (ODE) solvent using copper chlorine, indium chlorine and dodecanethiol (DDT) as sources. CuInS2 QDs with diameter of 2~5 nm were obtained by tuning the reaction temperatures and times. Furthermore, CuInS2/ZnS core/shell QDs was synthesized, which can prevent the CuInS2 quantum dots oxidized and improve their photoluminescnce with the coating of ZnS shell.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121050692","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A real-time non-contact pulse rate detector based on smartphone 一种基于智能手机的实时非接触式脉搏率检测器
2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI: 10.1109/ISNE.2015.7132025
Min-che Li, Yuan-Hsiang Lin
{"title":"A real-time non-contact pulse rate detector based on smartphone","authors":"Min-che Li, Yuan-Hsiang Lin","doi":"10.1109/ISNE.2015.7132025","DOIUrl":"https://doi.org/10.1109/ISNE.2015.7132025","url":null,"abstract":"A non-contact method to extract human cardiac pulse rate non-invasively is more affordable and convenient compared with conventional method using contact electrode. This paper developed a video method to extract pulse rate based on smartphone. Using the front camera of smartphone to capture image frame data of human face region, defined as ROI (region of interest) for extracting PPG signal. And to suppress motion artifacts that lead to calculation error while monitoring, we need to make ROI coordinates on human face stable and accurate. So we use face detection to get the location of human face initially, then using optical flow feature tracking keep tracking the feature points in ROI. Furthermore, Kalman filter is used to stable coordinates of ROI and enhance the waveform of PPG signal. The accuracy of pulse rate detection was evaluated by compared with FDA approved vital signs monitor.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124863160","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
The implementation of 1.8GHz dual channel switched beam-former with active inductors phase shifters 带有源电感移相器的1.8GHz双通道开关波束形成器的实现
2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI: 10.1109/ISNE.2015.7131962
Ming-Shiuan Wen, Jeng-Rern Yang
{"title":"The implementation of 1.8GHz dual channel switched beam-former with active inductors phase shifters","authors":"Ming-Shiuan Wen, Jeng-Rern Yang","doi":"10.1109/ISNE.2015.7131962","DOIUrl":"https://doi.org/10.1109/ISNE.2015.7131962","url":null,"abstract":"This paper presents a 1.8GHz dual channel switched beam-former with active inductors phase shifters. Utilize active inductors and capacities to achieve design of Hybrid phase shifters. Phase shifter loss of -3.85 dB and phase difference of 85 degree. The architecture of active inductor used gyrator topology [2][6] which uses few of transistors to reach the performance of inductive. Quality factor of active inductor are 42.7 at 1.8GHz, area of active inductor are smaller than spiral inductor a lot. So we propose that application on RF beam-former to solve interference problem. Dual channel switched beam-former system can transceiver the signal of same frequency either different frequency and can generate two independent and cover different range of beam-former at each direction.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122348345","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Improvement of memory bandwidth utilization using OpenMP task with processor affinity 使用具有处理器亲缘性的OpenMP任务改进内存带宽利用率
2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI: 10.1109/ISNE.2015.7131947
J. Arul, Chun Huang
{"title":"Improvement of memory bandwidth utilization using OpenMP task with processor affinity","authors":"J. Arul, Chun Huang","doi":"10.1109/ISNE.2015.7131947","DOIUrl":"https://doi.org/10.1109/ISNE.2015.7131947","url":null,"abstract":"The CPU design has been evolving for more than 30 years since the first x86 microprocessor. Recently, instead of increasing the CPU performance, the focus has shifted to multi-core architecture. Multi-core processor technology is rapidly evolving, but the memory interface is a limiting factor in fulfilling the needs of multi-core and multi-threaded processors. This is a big challenge for software developers. The run time thread is dynamically allocated to each processor core by the scheduler of the operating system. Current parallel programming researches only aim to load balance and keep the multi-core running efficiently. As a result, applications may have poor spatial data locality. This will also cause uneven memory bandwidth usage due to differences in memory access paths. The question of obtaining maximum memory bandwidth utilization by controlling the thread of a processor affinity is the main scope of this particular research. Memory bandwidth utilization of 62% (8786.87 MB/s to 14201.88 MB/s) was achieved, if appropriate processor affinity was set for thread placement. The OpenMP task level parallelism in addition to processor affinity resulted in 69% (8786.87 MB/s to 14802.69 MB/s) of improvement using 2 threads. Thus, task level parallelism combined with processor affinity greatly increases the level of parallelism in an OpenMP parallel programming environment. As a result, it can improve the overall performance of parallel applications.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122937281","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Design and experimental results of a wireless power receiver for the water pollution detection system 水污染检测系统无线电源接收器的设计与实验结果
2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI: 10.1109/ISNE.2015.7132016
Che-Yi Chiang, Long-Yi Lin, Hao-Chiao Hong
{"title":"Design and experimental results of a wireless power receiver for the water pollution detection system","authors":"Che-Yi Chiang, Long-Yi Lin, Hao-Chiao Hong","doi":"10.1109/ISNE.2015.7132016","DOIUrl":"https://doi.org/10.1109/ISNE.2015.7132016","url":null,"abstract":"This paper presents the design and experimental results of a wireless power receiver IC for the water pollution detection system. The system adopts the magnetic resonance method to transmit the wireless power. We adopts the active rectifier with dynamic body biasing scheme to implement the receiver. The receiver IC has been designed and fabricated in 0.35 um CMOS. Measurement results show that when the two coils have diameters of 9.5 cm and 2.2 cm and separated by a distance of 5 cm, the proposed wireless power receiver IC can supply 30.3 mW to a 400 Ω resistive load with a wireless power efficiency of 9.0%.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"434 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122928274","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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