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2015 International Symposium on Next-Generation Electronics (ISNE)最新文献

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A group-oriented QoS-enhanced proportional fair scheduling algorithm over downlink OFDMA-based networks 基于ofdma下行网络的分组qos增强型比例公平调度算法
2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI: 10.1109/ISNE.2015.7131958
I. Chao, Chuei-Sheng Chiou, Kai-Shan Hsu
{"title":"A group-oriented QoS-enhanced proportional fair scheduling algorithm over downlink OFDMA-based networks","authors":"I. Chao, Chuei-Sheng Chiou, Kai-Shan Hsu","doi":"10.1109/ISNE.2015.7131958","DOIUrl":"https://doi.org/10.1109/ISNE.2015.7131958","url":null,"abstract":"In this paper, we propose a Group-Oriented QoS-Enhanced proportional fair (GQPF) scheduling algorithm, which aiEnhanced proportional fair (GQPF) scheduling algorithm, which aims at maximizingms at maximizing QoS throughput while still retaining fairness as well as maximizing system throughput in downlink OFDMA networks. GQPF proposes a Group-Oriented QoS-enhanced PF-based utility function for multi-channel OFDMA networks. We demonstrate via extensive simulation results, that GQPF outperforms PF in terms of system throughput and mean delay. The results show that GQPF well accommodates nearly twice the amount of high priority data than PF does.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133471179","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Performance measurement and queueing model of Web servers with a variation of Webpage sizes 网页大小变化时Web服务器的性能测量和排队模型
2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI: 10.1109/ISNE.2015.7131976
Chung-Ping Chen, Guan-Jhong Lin, Yen-Hsing Lin, Huai-Ping Song, Ying-Wen Bai
{"title":"Performance measurement and queueing model of Web servers with a variation of Webpage sizes","authors":"Chung-Ping Chen, Guan-Jhong Lin, Yen-Hsing Lin, Huai-Ping Song, Ying-Wen Bai","doi":"10.1109/ISNE.2015.7131976","DOIUrl":"https://doi.org/10.1109/ISNE.2015.7131976","url":null,"abstract":"We measure and model the system response times of Web servers with a variation of Webpage sizes and different numbers of users. We use a queue model as the representation of physical measuring and obtain the simplified relationship between Webpage size and number of users. The main result is to provide the relationship among the system response times of Web servers with different Webpage sizes and the number of users for reference by Web server capacity planners.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"4 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132243254","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Optimization of multi-chip white LEDs with SiO2 structures SiO2结构多芯片白光led的优化设计
2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI: 10.1109/ISNE.2015.7131964
Chia-Nan Wang, Nguyen Thi Thu Khanh, N. Q. Anh
{"title":"Optimization of multi-chip white LEDs with SiO2 structures","authors":"Chia-Nan Wang, Nguyen Thi Thu Khanh, N. Q. Anh","doi":"10.1109/ISNE.2015.7131964","DOIUrl":"https://doi.org/10.1109/ISNE.2015.7131964","url":null,"abstract":"In this paper, we discuss the performance of the multi-chip white light LED packages with the proposed silicon dioxides (SiO2) structures. We find that the SiO2 structure and the size of SiO2 particle can bring the significant effect on the LED performance, such as the color uniformity and the luminous flux. Through the research results, it is suggested that the hybrid SiO2 structure with its size around 1μm can be suitable for obtaining higher color uniformity.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130742266","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Experimental study of a portable FLCOS projector with visible light communication (VLC) technology 采用可见光通信(VLC)技术的便携式FLCOS投影仪实验研究
2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI: 10.1109/ISNE.2015.7131988
H.-H. Chou, S. Liaw, Ming-Jen Chien, Chun-Jui Wu, C. Teng
{"title":"Experimental study of a portable FLCOS projector with visible light communication (VLC) technology","authors":"H.-H. Chou, S. Liaw, Ming-Jen Chien, Chun-Jui Wu, C. Teng","doi":"10.1109/ISNE.2015.7131988","DOIUrl":"https://doi.org/10.1109/ISNE.2015.7131988","url":null,"abstract":"We proposed to implement a VLC technology for portable FLCOS-based projector application. A FLCOS-based projector using RGB-based LEDs has designed and simulated. A RGB-based LEDs VLC link has investigated and the initial results using a reconfigurable design of a 1st order RC pre-equalizer has demonstrated that the entire system modulation bandwidth can be improved from 35MHz to 79.2MHz. Data transmission tests using OOK modulation shown that an aggregative transmission rate over 300Mb/s at a BER of 10-3 can be achieved.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134185903","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Subwavelength focusing of hybrid Ag-Au plasmonic lens with variant slit widths 不同狭缝宽度Ag-Au混合等离子体透镜的亚波长聚焦
2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI: 10.1109/ISNE.2015.7132039
Min-Hsiu Chen, Kai-Hao Chang, Po-Tsung Lee
{"title":"Subwavelength focusing of hybrid Ag-Au plasmonic lens with variant slit widths","authors":"Min-Hsiu Chen, Kai-Hao Chang, Po-Tsung Lee","doi":"10.1109/ISNE.2015.7132039","DOIUrl":"https://doi.org/10.1109/ISNE.2015.7132039","url":null,"abstract":"We design the hybrid Ag-Au double-layered structure as plasmonic lens. The subwavelength focusing can be achieved with focal length within 500 nm. Furthermore, the focusing properties can be tuned by the thickness ratio of Ag/Au. Finally, we find the best of focusing effect as the thickness ratio is 1.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"11 7","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134190946","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electrical characteristics of multi-gate P-channel FinFETs with VT implanting energies under temperature stress 温度应力下具有VT注入能量的多栅极p沟道finfet的电特性
2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI: 10.1109/ISNE.2015.7131979
Mu-Chun Wang, Yi-De Lai, Shao-Syuan Syu, W. Liao, W. Lan, Shea-Jue Wang
{"title":"Electrical characteristics of multi-gate P-channel FinFETs with VT implanting energies under temperature stress","authors":"Mu-Chun Wang, Yi-De Lai, Shao-Syuan Syu, W. Liao, W. Lan, Shea-Jue Wang","doi":"10.1109/ISNE.2015.7131979","DOIUrl":"https://doi.org/10.1109/ISNE.2015.7131979","url":null,"abstract":"The drive current under the higher doping energy in threshold voltage (VT) adjustment shows the higher performance. Simultaneously, this consequence in VT shift under heating effect also reflects the same trend. The deviation ratios at 20KeV and 15KeV doping energies are about 26% and 28%, respectively. The subthreshold swing (S.S.) at higher doping energy is slightly lower than that at higher one. After temperature stress, the S.S. shift at higher doping energy is somewhat greater than that at the lower one, but the transconductance shift at lower doping energy is greater.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122016471","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
GeSn waveguide photodetectors fabricated by rapid-melt-growth method 快速熔体生长法制备GeSn波导光电探测器
2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI: 10.1109/ISNE.2015.7132044
C. Tseng, Ching-Hsiang Chiu, Shih-Che Yen, K. Hsieh, N. Na, Ming-Chang M. Lee
{"title":"GeSn waveguide photodetectors fabricated by rapid-melt-growth method","authors":"C. Tseng, Ching-Hsiang Chiu, Shih-Che Yen, K. Hsieh, N. Na, Ming-Chang M. Lee","doi":"10.1109/ISNE.2015.7132044","DOIUrl":"https://doi.org/10.1109/ISNE.2015.7132044","url":null,"abstract":"A GeSn metal-semiconductor-metal (MSM) photodetector is fabricated on a silicon-on-insulator (SOI) waveguide by rapid melt growth method. The Sn concentration of the GeSn photodetector is 2 % and shows a larger photo-responsivity by comparing with a pure Ge photodetector at long wavelength. The dark current is 3.7e-7 A at 5.4 V and the operation speed can be as high as 6.2 GHz.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127456152","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Performance evaluation of corrupted signal caused by random way point and Gauss Markov mobility model on IEEE 1609.4 standards 基于IEEE 1609.4标准的随机路径点和高斯马尔可夫迁移率模型的损坏信号性能评价
2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI: 10.1109/ISNE.2015.7132026
D. Perdana, R. F. Sari
{"title":"Performance evaluation of corrupted signal caused by random way point and Gauss Markov mobility model on IEEE 1609.4 standards","authors":"D. Perdana, R. F. Sari","doi":"10.1109/ISNE.2015.7132026","DOIUrl":"https://doi.org/10.1109/ISNE.2015.7132026","url":null,"abstract":"Recently, to evalute the Quality of Service (QoS) due to the high mobility and corrupted signal impact by the Additive White Gaussian Noise (AWGN) have become essential interest on the IEEE 1609.4 standard. In this work, we study the Two Ray Ground propagation channel caused by Additive White Gaussian Noise (AWGN) on the IEEE 1609.4 standard. We use ns 3.18 and VanetMobiSim for the evaluation of the different scenario based on the Random Way Point and Gauss-Markov mobility model. We found that the Random Waypoint mobility model has better performance compared to Gauss-Markov mobility model in low density nodes.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126842405","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Effect of channel doping profiles on performance of germanium-on-insulator based junctionless transistors 沟道掺杂对绝缘体上锗基无结晶体管性能的影响
2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI: 10.1109/ISNE.2015.7132034
C. Sun, R. Liang, Libin Liu, Jing Wang, Jun Xu
{"title":"Effect of channel doping profiles on performance of germanium-on-insulator based junctionless transistors","authors":"C. Sun, R. Liang, Libin Liu, Jing Wang, Jun Xu","doi":"10.1109/ISNE.2015.7132034","DOIUrl":"https://doi.org/10.1109/ISNE.2015.7132034","url":null,"abstract":"The effect of channel doping profiles on germanium-on-insulator based junctionless transistors was investigated using Sentaurus 3D device simulator. Simulation results show that using Gaussian-function doping profile, which can be simply realized using ion implantation process, can obtain larger Ion/Ioff ratio and smaller subthreshold slope value compared with uniform doping profile. With the increase of aspect ratio (T/W) and decrease of gate length, the effect is greater. Smaller standard deviation of Gaussian-function doping profile can also induce better performance.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126171839","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Faraday-Tyndall effect of gold colloids 金胶体的法拉第-廷德尔效应
2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI: 10.1109/ISNE.2015.7131968
Shang-Yang Yu, Yun-Ju Chen, J. Liaw
{"title":"Faraday-Tyndall effect of gold colloids","authors":"Shang-Yang Yu, Yun-Ju Chen, J. Liaw","doi":"10.1109/ISNE.2015.7131968","DOIUrl":"https://doi.org/10.1109/ISNE.2015.7131968","url":null,"abstract":"We measured the divergence angles of a CW laser beam passing through gold colloids with different concentrations to quantitatively characterize Faraday-Tyndall effect. Our results show that the divergence angles of 532-nm and 785-nm CW laser beams through gold nanoparticles (GNPs) colloid are increased as the concentration of GNPs increases. The increased divergence angle of GNP at 532 nm is more significant than that at 785 nm, because the surface plasmon resonance of GNP is at 549 nm. Moreover, the effects of different-sized GNPs will be studied.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121606004","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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