Effect of channel doping profiles on performance of germanium-on-insulator based junctionless transistors

Abstract

The effect of channel doping profiles on germanium-on-insulator based junctionless transistors was investigated using Sentaurus 3D device simulator. Simulation results show that using Gaussian-function doping profile, which can be simply realized using ion implantation process, can obtain larger Ion/Ioff ratio and smaller subthreshold slope value compared with uniform doping profile. With the increase of aspect ratio (T/W) and decrease of gate length, the effect is greater. Smaller standard deviation of Gaussian-function doping profile can also induce better performance.