快速熔体生长法制备GeSn波导光电探测器

2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI:10.1109/ISNE.2015.7132044

C. Tseng, Ching-Hsiang Chiu, Shih-Che Yen, K. Hsieh, N. Na, Ming-Chang M. Lee

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引用次数: 3

摘要

采用快速熔体生长法在绝缘体上硅(SOI)波导上制备了GeSn金属-半导体-金属(MSM)光电探测器。与纯锗光探测器相比，GeSn光探测器的Sn浓度为2%，在长波长处具有更大的光响应性。在5.4 V时，暗电流为3.7e-7 A，工作速度高达6.2 GHz。

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GeSn waveguide photodetectors fabricated by rapid-melt-growth method

A GeSn metal-semiconductor-metal (MSM) photodetector is fabricated on a silicon-on-insulator (SOI) waveguide by rapid melt growth method. The Sn concentration of the GeSn photodetector is 2 % and shows a larger photo-responsivity by comparing with a pure Ge photodetector at long wavelength. The dark current is 3.7e-7 A at 5.4 V and the operation speed can be as high as 6.2 GHz.

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2015 International Symposium on Next-Generation Electronics (ISNE)

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