Electrical characteristics of multi-gate P-channel FinFETs with VT implanting energies under temperature stress

Abstract

The drive current under the higher doping energy in threshold voltage (VT) adjustment shows the higher performance. Simultaneously, this consequence in VT shift under heating effect also reflects the same trend. The deviation ratios at 20KeV and 15KeV doping energies are about 26% and 28%, respectively. The subthreshold swing (S.S.) at higher doping energy is slightly lower than that at higher one. After temperature stress, the S.S. shift at higher doping energy is somewhat greater than that at the lower one, but the transconductance shift at lower doping energy is greater.