发布求助
文献互助 智能选刊 最新文献

2015 International Symposium on Next-Generation Electronics (ISNE)最新文献

筛选
英文 中文
Effect of the polymer overcoat on the performance of the SiNx/SiOx multilayer barrier for OLED gas barrier applications 聚合物涂层对OLED气体阻挡用SiNx/SiOx多层阻挡层性能的影响
2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI: 10.1109/ISNE.2015.7131987
Jia-Hao Zhang, Yung-Sheng Wang, J. Liang, D. Wuu
{"title":"Effect of the polymer overcoat on the performance of the SiNx/SiOx multilayer barrier for OLED gas barrier applications","authors":"Jia-Hao Zhang, Yung-Sheng Wang, J. Liang, D. Wuu","doi":"10.1109/ISNE.2015.7131987","DOIUrl":"https://doi.org/10.1109/ISNE.2015.7131987","url":null,"abstract":"A SiN<sub>x</sub>/SiO<sub>x</sub> multi-inorganic barrier shows a low water-vapor transmission rate (WVTR) as the SiN<sub>x</sub>/SiO<sub>x</sub> pairs increased to five pairs. We found that the WVTR can be significantly reduced after coating a polymer overcoat on the barrier with five SiN<sub>x</sub>/SiO<sub>x</sub> pairs. Additionally, the inner residual stress can be obviously reduced with the thickness of the polymer overcoat. We conclude that the improvement of the WVTR is ascribed to the reduction of the inner residual stress after coating a polymer overcoat. A WVTR of 1.28 × 10<sup>-7</sup> (g/m<sup>2</sup>)/day can be achieved after the calcium test time of 1200 hours with a relative humidity of 90% at 60°C.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114963482","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Thermal field simulation of multi package LED module 多封装LED模组的热场模拟
2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI: 10.1109/ISNE.2015.7132012
Koonchun Lai, C. Tan, Kok-Ching Ong, KokEng Ng
{"title":"Thermal field simulation of multi package LED module","authors":"Koonchun Lai, C. Tan, Kok-Ching Ong, KokEng Ng","doi":"10.1109/ISNE.2015.7132012","DOIUrl":"https://doi.org/10.1109/ISNE.2015.7132012","url":null,"abstract":"To date, light-emitting diode (LED) was often manufactured as multi package module instead of single package as for the luminosity demand and cost concern. Nevertheless, the uniformity of temperature gradient may generate unbalanced stress along the multi package interface, resulting in lifespan and output degradation. It is hence obligatory to predict and model the thermal transfer performance of the LED module prior to the manufacturing process as to ensure output quality and prevent catastrophic failure.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"200 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121857131","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Proportion-aware IP over hierarchical WDM ring networks 分层WDM环网上的比例感知IP
2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI: 10.1109/ISNE.2015.7131984
Jih-Hsin Ho
{"title":"Proportion-aware IP over hierarchical WDM ring networks","authors":"Jih-Hsin Ho","doi":"10.1109/ISNE.2015.7131984","DOIUrl":"https://doi.org/10.1109/ISNE.2015.7131984","url":null,"abstract":"Wavelength division multiplexing (WDM) appears to be the solution of choice for providing a faster networking infrastructure that can meet the explosive growth of the Internet. It has the scalability problem with increasing the access node numbers in WDM ring architecture, so we further propose the alternatives of hierarchical WDM ring architecture. Since the traditional IP provides the best effort service only, the issue of supporting IP packets with QoS transfer has become a crucial issue for multimedia transmission. We do so by addressing the proportion-aware QoS model. Finally present performance analysis multiple classes of hierarchical WDM ring networks.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121600194","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
User authentication system for testing students in computer sciences subjects 用于计算机科学专业学生考试的用户认证系统
2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI: 10.1109/ISNE.2015.7131948
J. Kalikova, Milan Koukol, J. Krcál
{"title":"User authentication system for testing students in computer sciences subjects","authors":"J. Kalikova, Milan Koukol, J. Krcál","doi":"10.1109/ISNE.2015.7131948","DOIUrl":"https://doi.org/10.1109/ISNE.2015.7131948","url":null,"abstract":"At CTU FTS we are currently developing BioTest, an authentication system for testing students using state-of-the-art information technology and unambiguous Biometric authentication for each user. We use this system for identification during exams and testing. The BioTest software operates on the basis of a student's face recognition comparing the pattern with data on the student's ID card, while informing the relevant teacher about the student's identity.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128579071","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Joint precoding and transmit antenna selection with power allocation in multiuser MIMO systems under limited feedback 有限反馈下多用户MIMO系统的联合预编码和发射天线选择与功率分配
2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI: 10.1109/ISNE.2015.7131978
Wen-Hsien Fang, Yie-Tarng Chen, Tso-I Lai
{"title":"Joint precoding and transmit antenna selection with power allocation in multiuser MIMO systems under limited feedback","authors":"Wen-Hsien Fang, Yie-Tarng Chen, Tso-I Lai","doi":"10.1109/ISNE.2015.7131978","DOIUrl":"https://doi.org/10.1109/ISNE.2015.7131978","url":null,"abstract":"This paper considers a joint quantized precoding and transmit antenna selection with power allocation problem in the downlink of multiuser multi-input multi-output (MIMO) systems with limited feedback. Our objective is to maximize the capacity, which leads to a mixed integer programming (MIP) problem. To resolve this complicated MIP problem with reasonable cost, we propose a new heterogeneous genetic algorithm (HGA), where each chromosome is divided into a bit string for precoding vector selection, an integer string for transmit antenna selection, and a real number string for power allocation. In addition, new crossover and mutation operations are employed to accommodate these new chromosomes. Conducted simulations show that the proposed HGA provides superior performance compared with previous works.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128908317","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
GaN-based LEDs with flower shape ZnO nanorods by SILAR-based and hydrothermal methods 用硅基和水热法制备具有花状ZnO纳米棒的氮化镓基led
2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI: 10.1109/ISNE.2015.7131991
N. Lin, S. Shei, S. Chang
{"title":"GaN-based LEDs with flower shape ZnO nanorods by SILAR-based and hydrothermal methods","authors":"N. Lin, S. Shei, S. Chang","doi":"10.1109/ISNE.2015.7131991","DOIUrl":"https://doi.org/10.1109/ISNE.2015.7131991","url":null,"abstract":"The authors applied a simple and low-cost successive ionic layer adsorption and reaction (SILAR) and hydrothermal method (Hm) methods to form ZnO nanorods with the flower shape for GaN-based light-emitting diodes (LEDs). With 20 mA current injection, it was found that forward voltages were all 3.4 V when the 20mA output powers were 2.36, 2.69, 3.04, 3.24, and 3.0 mW for LED I, LED II, LED III, LED IV, and LED V, respectively. Furthermore, it was also found that the formation of ZnO nanorods on the top of ITO surface did not degrade the electrical properties.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115472341","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
All silicon rich silicon carbide based solar cell 全硅富碳化硅太阳能电池
2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI: 10.1109/ISNE.2015.7131992
Chih-Hsien Cheng, Gong-Ru Lin
{"title":"All silicon rich silicon carbide based solar cell","authors":"Chih-Hsien Cheng, Gong-Ru Lin","doi":"10.1109/ISNE.2015.7131992","DOIUrl":"https://doi.org/10.1109/ISNE.2015.7131992","url":null,"abstract":"All silicon rich silicon carbide based photovoltaic solar cells (PVSCs) are demonstrated by using the PECVD. By using the [CH<sub>4</sub>]/[CH<sub>4</sub>+SiH<sub>4</sub>] fluence ratio of 50%, the i-Si<sub>x</sub>C<sub>1-x</sub> layer exhibits the C/Si composition ratio of 0.503, which contributes to an additional absorbance at visible light region with the highest absorption coefficient of 2×10<sup>5</sup> cm<sup>-1</sup>. The open-circuit voltage and short-circuit current of the Si-rich Si<sub>0.67</sub>C<sub>0.33</sub>/a-S tandem PVSC are enhanced to 0.82 V and 28.1 mA/cm<sup>2</sup> with the conversion efficiency and filling factor to 5.51% and 27%, respectively.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115864356","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Selenization of Cu2ZnSnSe4 thin films by rapid thermal processing 快速热处理Cu2ZnSnSe4薄膜的硒化
2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI: 10.1109/ISNE.2015.7131944
Jian-Wei Du, S. Shei
{"title":"Selenization of Cu2ZnSnSe4 thin films by rapid thermal processing","authors":"Jian-Wei Du, S. Shei","doi":"10.1109/ISNE.2015.7131944","DOIUrl":"https://doi.org/10.1109/ISNE.2015.7131944","url":null,"abstract":"In this study showed that the single phases CZTSe were successfully synthesized without any other secondary phase existed. EDS measurement results showed that the Cu poor and Zn rich thin films. Subsequently, selenization the CZTSe precursor films were prepared by rapid thermal annealing (RTA). A few minutes of annealing at 550° are sufficient to produce crystalline CZTSe films with grain sizes in the micrometer range. We found that CZTSe nanoparticles for short reaction time 3hr, the mixture of various intermediate phase such as CuSe2, ZnSe and Zn, Selenization obtained pure CZTSe phase and CZTSe thin films grain sizes about 1μm~2μm. Selenization the CZTSe reaction time for 3hr obtained single CZTSe phase. It can reduce the CZTSe thin films process and obtained uniform, great crystalline thin films.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126624935","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A crossbar-based controller design for flash memory 一种基于横杆的闪存控制器设计
2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI: 10.1109/ISNE.2015.7131972
Yunseok Lee, Chin-Hsien Wu
{"title":"A crossbar-based controller design for flash memory","authors":"Yunseok Lee, Chin-Hsien Wu","doi":"10.1109/ISNE.2015.7131972","DOIUrl":"https://doi.org/10.1109/ISNE.2015.7131972","url":null,"abstract":"In the paper, we will propose a crossbar-based controller design for flash memory to configure a variety of possible architectures to investigate the relationship between the controllers and the NAND flash memory chips. Furthermore, the crossbar-based control design can avoid the channel-limit problem. According to experiment results, the design can simulate a variety of possible architectures and reveal the pros and cons of different architectures.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126202559","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fabrication and optical characterization of ultra-thin anodic aluminum oxide nanoporous templates 超薄阳极氧化铝纳米孔模板的制备及光学表征
2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI: 10.1109/ISNE.2015.7132018
Kuan-Yu Hsiao, W. Ho, Po-Yueh Cheng, C. Yeh, Ruei-Siang Sue, Yu-Tang Shen, C. Hu, Y. Deng
{"title":"Fabrication and optical characterization of ultra-thin anodic aluminum oxide nanoporous templates","authors":"Kuan-Yu Hsiao, W. Ho, Po-Yueh Cheng, C. Yeh, Ruei-Siang Sue, Yu-Tang Shen, C. Hu, Y. Deng","doi":"10.1109/ISNE.2015.7132018","DOIUrl":"https://doi.org/10.1109/ISNE.2015.7132018","url":null,"abstract":"In this study, the fabrication of thin porous anodic aluminum oxide (AAO) templates with controllable thickness of 400-1300 nm is demonstrated. One-step anodizing method is used to generate AAO template with hexagonal porous distributed profile. The pore diameter pore-widening and AAO barrier layer thinned down are investigated. The morphologies and pore structures of the fabricated AAO templates are characterized using FE-SEM images and the transmittance and reflective spectra.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121526772","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信