All silicon rich silicon carbide based solar cell

Abstract

All silicon rich silicon carbide based photovoltaic solar cells (PVSCs) are demonstrated by using the PECVD. By using the [CH₄]/[CH₄+SiH₄] fluence ratio of 50%, the i-Si_xC_1-x layer exhibits the C/Si composition ratio of 0.503, which contributes to an additional absorbance at visible light region with the highest absorption coefficient of 2×10⁵ cm^-1. The open-circuit voltage and short-circuit current of the Si-rich Si_0.67C_0.33/a-S tandem PVSC are enhanced to 0.82 V and 28.1 mA/cm² with the conversion efficiency and filling factor to 5.51% and 27%, respectively.