{"title":"全硅富碳化硅太阳能电池","authors":"Chih-Hsien Cheng, Gong-Ru Lin","doi":"10.1109/ISNE.2015.7131992","DOIUrl":null,"url":null,"abstract":"All silicon rich silicon carbide based photovoltaic solar cells (PVSCs) are demonstrated by using the PECVD. By using the [CH<sub>4</sub>]/[CH<sub>4</sub>+SiH<sub>4</sub>] fluence ratio of 50%, the i-Si<sub>x</sub>C<sub>1-x</sub> layer exhibits the C/Si composition ratio of 0.503, which contributes to an additional absorbance at visible light region with the highest absorption coefficient of 2×10<sup>5</sup> cm<sup>-1</sup>. The open-circuit voltage and short-circuit current of the Si-rich Si<sub>0.67</sub>C<sub>0.33</sub>/a-S tandem PVSC are enhanced to 0.82 V and 28.1 mA/cm<sup>2</sup> with the conversion efficiency and filling factor to 5.51% and 27%, respectively.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"All silicon rich silicon carbide based solar cell\",\"authors\":\"Chih-Hsien Cheng, Gong-Ru Lin\",\"doi\":\"10.1109/ISNE.2015.7131992\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"All silicon rich silicon carbide based photovoltaic solar cells (PVSCs) are demonstrated by using the PECVD. By using the [CH<sub>4</sub>]/[CH<sub>4</sub>+SiH<sub>4</sub>] fluence ratio of 50%, the i-Si<sub>x</sub>C<sub>1-x</sub> layer exhibits the C/Si composition ratio of 0.503, which contributes to an additional absorbance at visible light region with the highest absorption coefficient of 2×10<sup>5</sup> cm<sup>-1</sup>. The open-circuit voltage and short-circuit current of the Si-rich Si<sub>0.67</sub>C<sub>0.33</sub>/a-S tandem PVSC are enhanced to 0.82 V and 28.1 mA/cm<sup>2</sup> with the conversion efficiency and filling factor to 5.51% and 27%, respectively.\",\"PeriodicalId\":152001,\"journal\":{\"name\":\"2015 International Symposium on Next-Generation Electronics (ISNE)\",\"volume\":\"33 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-05-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 International Symposium on Next-Generation Electronics (ISNE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISNE.2015.7131992\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 International Symposium on Next-Generation Electronics (ISNE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISNE.2015.7131992","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
All silicon rich silicon carbide based photovoltaic solar cells (PVSCs) are demonstrated by using the PECVD. By using the [CH4]/[CH4+SiH4] fluence ratio of 50%, the i-SixC1-x layer exhibits the C/Si composition ratio of 0.503, which contributes to an additional absorbance at visible light region with the highest absorption coefficient of 2×105 cm-1. The open-circuit voltage and short-circuit current of the Si-rich Si0.67C0.33/a-S tandem PVSC are enhanced to 0.82 V and 28.1 mA/cm2 with the conversion efficiency and filling factor to 5.51% and 27%, respectively.
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