微负载效应下密集隔离n型finfet的电学性能

2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-06-25 DOI:10.1109/ISNE.2015.7131985

Mu-Chun Wang, Jian-Liang Lin, D. Jhuang, W. Liao, Yi-De Lai, W. Lan, Shea-Jue Wang

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引用次数: 2

摘要

微加载效应在本研究中表现得十分明显。根据绘制布局(W/L=0.11/0.5 (μm/μm))下密集隔离FinFET器件的驱动电流(IDS)提取，11鳍指与单鳍指的比值为10.01。利用返工概念推导出，当外侧壁高度(Hfin)为90 nm时，位于内侧壁翅片高度的未蚀刻深度(ΔH)仍在2.4 nm左右。

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Electrical performance of dense and isolated n-type FinFETs in micro-loading effect

The micro-loading effect in this work seems obviously. According to the extraction of drive current (IDS) for dense and isolated FinFET devices at the on-drawn layout (W/L=0.11/0.5 (μm/μm), the ratio with 11-fin fingers vs. single fin was 10.01. Using the re-work concept to derive the un-etching depth (ΔH) located at the inner sidewall fin height was still around 2.4 nm as the outer sidewall height (Hfin) was 90 nm.

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2015 International Symposium on Next-Generation Electronics (ISNE)

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