Field emission of electrochemical graphene oxide

2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-06-25 DOI:10.1109/ISNE.2015.7131994

Yi-Tsung Chang, Yun-Jhung Chih, B. Lin, C. Chen

引用次数: 2

Abstract

Field emission device of graphene oxide (GO) with parallel plate-type structure was successfully produced with highly oriented pyrolytic graphite (HOPG) by electrochemical exfoliation. The material, chemical characteristics and material surface structure were analyzed with Raman spectroscopy, XRD, SEM and XPS as well. The best field emission enhancement factor β is 1878.5, and the turn-on field defined current equals to 1μA, max emission current are 3.73V/μm and 12μA, respectively. GO is a good candidate for field emission device.

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电化学氧化石墨烯的场发射

以高取向热解石墨(HOPG)为材料，采用电化学剥离法制备了平行板状结构的氧化石墨烯(GO)场致发射器件。采用拉曼光谱、XRD、SEM和XPS分析了材料的化学特性和表面结构。最佳场发射增强因子β为1878.5，导通场定义电流为1μA，最大发射电流分别为3.73V/μm和12μA。氧化石墨烯是场致发射器件的良好候选材料。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2015 International Symposium on Next-Generation Electronics (ISNE)

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