Si和Ge的快速低温溅射外延及其在光电子学中的应用

2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI:10.1109/ISNE.2015.7132040

W. Yeh, M. Matsumoto, K. Sugihara

{"title":"Si和Ge的快速低温溅射外延及其在光电子学中的应用","authors":"W. Yeh, M. Matsumoto, K. Sugihara","doi":"10.1109/ISNE.2015.7132040","DOIUrl":null,"url":null,"abstract":"Novel Si/SiGex-Ge multi-junction solar cell structure was proposed, and pin junction Ge solar cell was fabricated on Ge substrate by sputter epitaxy for the first time, in which growth temperature was under 360°C and growth rates was ~2 nm/s. Internal quantum efficiency at infrared wavelength was as high as 76%, with an open circuit voltage of 0.15V.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Fast and low-temperature sputtering epitaxy of Si and Ge and its application to optoelectronics\",\"authors\":\"W. Yeh, M. Matsumoto, K. Sugihara\",\"doi\":\"10.1109/ISNE.2015.7132040\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Novel Si/SiGex-Ge multi-junction solar cell structure was proposed, and pin junction Ge solar cell was fabricated on Ge substrate by sputter epitaxy for the first time, in which growth temperature was under 360°C and growth rates was ~2 nm/s. Internal quantum efficiency at infrared wavelength was as high as 76%, with an open circuit voltage of 0.15V.\",\"PeriodicalId\":152001,\"journal\":{\"name\":\"2015 International Symposium on Next-Generation Electronics (ISNE)\",\"volume\":\"14 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-05-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 International Symposium on Next-Generation Electronics (ISNE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISNE.2015.7132040\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 International Symposium on Next-Generation Electronics (ISNE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISNE.2015.7132040","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

提出了一种新型的Si/SiGex-Ge多结太阳能电池结构，并首次采用溅射外延技术在Ge衬底上制备了生长温度低于360℃、生长速率为~2 nm/s的引脚结锗太阳电池。红外波长内量子效率高达76%，开路电压为0.15V。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Fast and low-temperature sputtering epitaxy of Si and Ge and its application to optoelectronics

Novel Si/SiGex-Ge multi-junction solar cell structure was proposed, and pin junction Ge solar cell was fabricated on Ge substrate by sputter epitaxy for the first time, in which growth temperature was under 360°C and growth rates was ~2 nm/s. Internal quantum efficiency at infrared wavelength was as high as 76%, with an open circuit voltage of 0.15V.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2015 International Symposium on Next-Generation Electronics (ISNE)

自引率

0.00%

发文量