具有光栅结构的III-V/硅混合表面发射激光器设计

2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI:10.1109/ISNE.2015.7131945

Jen-Hung Huang, Bai-Ci Chen, Yu-Chang Wu, C. Lin

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引用次数: 0

摘要

设计了由HCG反射镜、光学增益约为1.31 μm的InGaAsP量子阱有源层和TiO2/SiO2 DBR组成的VCSEL。理论上可以通过调整BCB层和N-InP层的厚度来获得较小的阈值增益。

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Design of III-V/silicon hybrid surface-emitting laser with grating structure

The VCSEL consisting of the HCG mirror, an active layer with InGaAsP quantum wells having optical gain around 1.31 μm and a TiO₂/SiO₂ DBR is designed. Small threshold gain can be theoretically gotten by adjusting the thickness of BCB layer and N-InP layer.

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2015 International Symposium on Next-Generation Electronics (ISNE)

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