用于为皮下植入式装置供电的镜辅助交叉指间背接触CMOS光电器件

2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI:10.1109/ISNE.2015.7131993

Jia-Fa Chen, C. Chun, Y. Hung

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引用次数: 1

摘要

本文通过实验证明了在CMOS背接触光伏器件中，利用标准块体CMOS中的多层金属同时实现器件串联电阻均匀和背面金属反射镜的高光反射，从而在980 nm照明下，将指型和叶型结设计的器件效率分别提高到18.05和20.33%。

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Mirror-assisted interdigitated back-contact CMOS photovoltaic devices for powering subcutaneous implantable devices

Enhanced photocurrent generation in CMOS back-contact photovoltaic devices is experimentally demonstrated in this work by utilizing multilevel metals in standard bulk CMOS to simultaneously achieve uniform series resistance of devices and high optical reflection from back metal mirrors, thus boosting the device efficiency to 18.05 and 20.33% for fingerand leaf-type junction designs, respectively, under 980-nm illumination.

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2015 International Symposium on Next-Generation Electronics (ISNE)

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