{"title":"Design of III-V/silicon hybrid surface-emitting laser with grating structure","authors":"Jen-Hung Huang, Bai-Ci Chen, Yu-Chang Wu, C. Lin","doi":"10.1109/ISNE.2015.7131945","DOIUrl":null,"url":null,"abstract":"The VCSEL consisting of the HCG mirror, an active layer with InGaAsP quantum wells having optical gain around 1.31 μm and a TiO<sub>2</sub>/SiO<sub>2</sub> DBR is designed. Small threshold gain can be theoretically gotten by adjusting the thickness of BCB layer and N-InP layer.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"135 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 International Symposium on Next-Generation Electronics (ISNE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISNE.2015.7131945","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The VCSEL consisting of the HCG mirror, an active layer with InGaAsP quantum wells having optical gain around 1.31 μm and a TiO2/SiO2 DBR is designed. Small threshold gain can be theoretically gotten by adjusting the thickness of BCB layer and N-InP layer.