{"title":"用于LTE应用的1.8 GHz和2.6 GHz双频CMOS功率放大器","authors":"Guan-Yu Pan, Jeng-Rern Yang","doi":"10.1109/ISNE.2015.7131970","DOIUrl":null,"url":null,"abstract":"This paper presents a dual-band power amplifier (PA) for LTE applications at 1.8 GHz and 2.6GHz in TSMC 0.18 μm CMOS technology. The proposed PA consists of a two-stage cascode structure comprising a driver stage and power stage. The driver stage employs a RC feedback and resistive feedback. The feedback technique is used to improve the bandwidth. The power stage employs a diode linearizer help to enhance linearity. The simulation results indicated that the PA exhibited an average power gain of 21 dB, an input return loss (S11) less than -18 dB, the output power is about 24.8/23 dBm, and power added efficiency (PAE) is about 35/33 % at 1.8/2.6 GHz. The power consumption is 211 mW at an operation voltage of 3.3V.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"211 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A dual-band CMOS power amplifier at 1.8 GHz and 2.6 GHz for LTE applications\",\"authors\":\"Guan-Yu Pan, Jeng-Rern Yang\",\"doi\":\"10.1109/ISNE.2015.7131970\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a dual-band power amplifier (PA) for LTE applications at 1.8 GHz and 2.6GHz in TSMC 0.18 μm CMOS technology. The proposed PA consists of a two-stage cascode structure comprising a driver stage and power stage. The driver stage employs a RC feedback and resistive feedback. The feedback technique is used to improve the bandwidth. The power stage employs a diode linearizer help to enhance linearity. The simulation results indicated that the PA exhibited an average power gain of 21 dB, an input return loss (S11) less than -18 dB, the output power is about 24.8/23 dBm, and power added efficiency (PAE) is about 35/33 % at 1.8/2.6 GHz. The power consumption is 211 mW at an operation voltage of 3.3V.\",\"PeriodicalId\":152001,\"journal\":{\"name\":\"2015 International Symposium on Next-Generation Electronics (ISNE)\",\"volume\":\"211 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-05-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 International Symposium on Next-Generation Electronics (ISNE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISNE.2015.7131970\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 International Symposium on Next-Generation Electronics (ISNE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISNE.2015.7131970","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A dual-band CMOS power amplifier at 1.8 GHz and 2.6 GHz for LTE applications
This paper presents a dual-band power amplifier (PA) for LTE applications at 1.8 GHz and 2.6GHz in TSMC 0.18 μm CMOS technology. The proposed PA consists of a two-stage cascode structure comprising a driver stage and power stage. The driver stage employs a RC feedback and resistive feedback. The feedback technique is used to improve the bandwidth. The power stage employs a diode linearizer help to enhance linearity. The simulation results indicated that the PA exhibited an average power gain of 21 dB, an input return loss (S11) less than -18 dB, the output power is about 24.8/23 dBm, and power added efficiency (PAE) is about 35/33 % at 1.8/2.6 GHz. The power consumption is 211 mW at an operation voltage of 3.3V.
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