各种隧道tfet的电性能评价

2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI:10.1109/ISNE.2015.7132032

C. Huang, Tao-Yi Hung, Pei-Yu Wang, B. Tsui

{"title":"各种隧道tfet的电性能评价","authors":"C. Huang, Tao-Yi Hung, Pei-Yu Wang, B. Tsui","doi":"10.1109/ISNE.2015.7132032","DOIUrl":null,"url":null,"abstract":"Tunnel field-effect transistor (TFET) is a promising device which has extraordinary performance on subthreshold swing and is feasible for ultralow power applications. However, one of the main factors of power dissipation and circuit delay among different designs of TFET, namely, parasitic capacitances, has not been discussed in detail. In this paper, parasitic capacitance of various types of TFETs are simulate and analyze.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Evaluation of electrical performance of various tunnel TFETs\",\"authors\":\"C. Huang, Tao-Yi Hung, Pei-Yu Wang, B. Tsui\",\"doi\":\"10.1109/ISNE.2015.7132032\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Tunnel field-effect transistor (TFET) is a promising device which has extraordinary performance on subthreshold swing and is feasible for ultralow power applications. However, one of the main factors of power dissipation and circuit delay among different designs of TFET, namely, parasitic capacitances, has not been discussed in detail. In this paper, parasitic capacitance of various types of TFETs are simulate and analyze.\",\"PeriodicalId\":152001,\"journal\":{\"name\":\"2015 International Symposium on Next-Generation Electronics (ISNE)\",\"volume\":\"65 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-05-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 International Symposium on Next-Generation Electronics (ISNE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISNE.2015.7132032\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 International Symposium on Next-Generation Electronics (ISNE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISNE.2015.7132032","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

隧道场效应晶体管(ttfet)是一种极具发展前景的器件，具有优异的亚阈值摆幅性能，在超低功耗应用中是可行的。然而，在不同设计的TFET中，影响功耗和电路延迟的主要因素之一，即寄生电容，尚未得到详细的讨论。本文对不同类型tfet的寄生电容进行了仿真分析。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Evaluation of electrical performance of various tunnel TFETs

Tunnel field-effect transistor (TFET) is a promising device which has extraordinary performance on subthreshold swing and is feasible for ultralow power applications. However, one of the main factors of power dissipation and circuit delay among different designs of TFET, namely, parasitic capacitances, has not been discussed in detail. In this paper, parasitic capacitance of various types of TFETs are simulate and analyze.

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2015 International Symposium on Next-Generation Electronics (ISNE)

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