Cheng'en Wu, Changyuan Chang, Yan Zhang, Junjie Hu, Yao Chen
{"title":"Design of a low EMI boost converter using bi-frequency PFM control mode","authors":"Cheng'en Wu, Changyuan Chang, Yan Zhang, Junjie Hu, Yao Chen","doi":"10.1109/ISNE.2015.7131966","DOIUrl":null,"url":null,"abstract":"A bi-frequency PFM controlled boost DC-DC converter is designed and implemented in this paper to improve the electro-magnetic interference (EMI) and efficiency of the system in a wide load range. The spectral energy of proposed bi-frequency PFM controlled converter is distributed to more frequency points to decrease the discrete harmonic peak, achieving low EMI. A control IC for the boost converter has been fabricated in Founder Microelectronics 0.5μm CMOS process. Experimental results show that the full-load conversion efficiency is over 80%, and the converter has fine EMI characteristics.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 International Symposium on Next-Generation Electronics (ISNE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISNE.2015.7131966","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
A bi-frequency PFM controlled boost DC-DC converter is designed and implemented in this paper to improve the electro-magnetic interference (EMI) and efficiency of the system in a wide load range. The spectral energy of proposed bi-frequency PFM controlled converter is distributed to more frequency points to decrease the discrete harmonic peak, achieving low EMI. A control IC for the boost converter has been fabricated in Founder Microelectronics 0.5μm CMOS process. Experimental results show that the full-load conversion efficiency is over 80%, and the converter has fine EMI characteristics.