{"title":"A 4-54GHz Static Frequency Divider with Back-Gate Coupling","authors":"Jung-Yu Chang, Shen-Iuan Liu","doi":"10.1109/VDAT.2007.373247","DOIUrl":"https://doi.org/10.1109/VDAT.2007.373247","url":null,"abstract":"A static frequency divider by using the back-gate coupling technique is presented. The proposed circuit has been fabricated in a 90 nm CMOS process. Driven by the differential signals, the measured operating frequency range of the conventional circuit is from 4 GHz to 48 GHz, while that of the proposed circuit is from 4GHz to 54GHz by choosing the same device size. The measurement result shows that the proposed static frequency divider improves the operating frequency range by 10% with only a little overhead. The maximum power consumption is 39.7 mW from a 1.5 V supply voltage.","PeriodicalId":137915,"journal":{"name":"2007 International Symposium on VLSI Design, Automation and Test (VLSI-DAT)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125260345","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Toward Automatic Synthesis of SOC Test Platforms","authors":"Wen-Cheng Huang, C. Chang, Kuen-Jong Lee","doi":"10.1109/VDAT.2007.373234","DOIUrl":"https://doi.org/10.1109/VDAT.2007.373234","url":null,"abstract":"Employing a test platform in an SOC design to execute test procedures can greatly simplify many SOC test problems. It, however, would require tremendous human efforts if the test platform would be generated manually. In this paper, we describe a design automation system, called DASTEP (design automation system for SOC test platform), that is aimed to help users build a test platform and incorporate their IP designs into the platform. DASTEP provides an interactive mode to allow users to modify individual IP cores into 1149.1-or 1500-compatible ones and integrate them into the test platform. For a hierarchical core, DASTEP can synthesize a hierarchical test control architecture such that each core in the hierarchy can be efficiently tested in a 1149.1-compatible manner. All of the test procedures using this test platform are carried out on the chip through the cooperation of an embedded processor that usually exists in an SOC design and a dedicated test-access-mechanism (TAM) controller that can be automatically generated. Appropriate simulation environment that allows the simulation of the entire test flow is also created in conjunction with the generation of the test hardware/software, hence the verification of both core design and test plan can be readily carried out. A friendly graphic user interface tool is also developed that can greatly simplify the generation and simulation of the test platform.","PeriodicalId":137915,"journal":{"name":"2007 International Symposium on VLSI Design, Automation and Test (VLSI-DAT)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127201533","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A Memory-Efficient Progressive JPEG Decoder","authors":"Kun-Bin Lee, Chi-Cheng Ju","doi":"10.1109/VDAT.2007.373198","DOIUrl":"https://doi.org/10.1109/VDAT.2007.373198","url":null,"abstract":"Image formats specified by the joint photographic expert group (JPEG) are preferred in many applications, including Internet and digital cameras. Baseline and progressive JPEG are the two of the most popular formats. While the challenge to design a baseline JPEG decoder is mainly the computation complexity, the challenge to design a progressive JPEG decoder imposes on the size of the available working memory and the rate of data transfer between the decoder and the storage. This paper presents a memory-efficient progressive JPEG decoder for embedded systems with limited working memory. Two progressive JPEG rendering flows, one-pass and multi-pass flows, are proposed to improve the most time-consuming data transfer and arithmetic operations during the rendering procedure. The using of dynamically adaptive rendering flow makes proposed progressive JPEG decoder well suited to a wide range of image processing applications in consumer products.","PeriodicalId":137915,"journal":{"name":"2007 International Symposium on VLSI Design, Automation and Test (VLSI-DAT)","volume":"2015 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121324915","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Low Power and Power Aware Design for DVB-T/H Baseband Inner Receiver","authors":"C. Tseng, Ting-Chen Wei, Wei-Chang Liu, S. Jou","doi":"10.1109/VDAT.2007.373245","DOIUrl":"https://doi.org/10.1109/VDAT.2007.373245","url":null,"abstract":"From hardware point of view, system and RTL low power and power aware design techniques are applied to the DVB-T/H baseband inner receiver. In RTL design, we use pre-computation, differential encoding, hardware sharing, time-multiplexing R/W of memory, low power arithmetic architecture so that each block can reduce power from 3% to 26%. In system level, the proposed DPM (dynamic power manager) is a power control unit for our system. When the system enters the offset tracking mode, the DPM controls the power states of system blocks between the GI (guard interval) period and symbol period. The power reduction ratio ranges from 3%~20% (it depends on the Gl mode). Moreover, a predicted phase scheme is proposed to provide the initial phase offset for the start of symbol period during offset tracking mode. The overall reduction for synchronization loop is about 50% in both hardware area and power.","PeriodicalId":137915,"journal":{"name":"2007 International Symposium on VLSI Design, Automation and Test (VLSI-DAT)","volume":"273 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116420670","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
J. Hong, K. Huang, P. Pong, J. Pan, J. Kang, K.C. Wu
{"title":"An LLC-OCV Methodology for Statistic Timing Analysis","authors":"J. Hong, K. Huang, P. Pong, J. Pan, J. Kang, K.C. Wu","doi":"10.1109/VDAT.2007.373199","DOIUrl":"https://doi.org/10.1109/VDAT.2007.373199","url":null,"abstract":"With further increase in chip size and shrink in device dimension, the influence of on chip semiconductor process variation can no longer be ignored in design phase such as STA sign-off. This paper presents the LLC-OCV methodology, which adopts the Monte Carlo analysis to enhance the location-based OCV (LOCV) with gate-level and cell-based perspectives, to be used as a reasonable and complete intra-die process model for STA (statistic timing analysis) sign-off. This new approach shows good prediction for STA sign-off. With LLC-OCV methodology, this paper has correctly identified timing problems in real silicon projects of 0.13 mum process in STA sign-off stage. Comparing the STA results of LOCV and LLC-OCV methodology, our experiment shows that LLC-OCV approach can avoid pessimistic analysis and save chip area.","PeriodicalId":137915,"journal":{"name":"2007 International Symposium on VLSI Design, Automation and Test (VLSI-DAT)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116807253","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Theoretical Analysis and Implementation of a Variable Gain Even Harmonic Mixer","authors":"J. Hsieh, Shuenn-Yuh Lee","doi":"10.1109/VDAT.2007.372760","DOIUrl":"https://doi.org/10.1109/VDAT.2007.372760","url":null,"abstract":"This paper presents a new topology of variable gain even harmonic mixer (VGEHM) for IEEE 802.11 a, which includes a proposed NMOS double frequency circuit (DFC) and a PMOS active load (AL) topology. The proposed NMOS DFC can immunize the DC offset and increase isolation. The AL is used to increase gain and achieve wide-gain variation. In this paper, theoretical analyses of conversion gain and linearity have been described in detail. The proposed mixer is implemented in TSMC CMOS 0.18 mum process to evaluate its performance. The measured results, according to RF of 5.25 GHz and IF of 800 KHz, show the isolation of 57.35 dB between RF and LO, and the variable conversion gain between -28.02 dB and 6.21 dB. Meanwhile, the high linearity is also achieved by referring to input compression point (IIPIdB) of -16 dBm, input second order intercept point (IIP2) of 17.66 dBm, input third order intercept point (IIP3) of -3.945 dBm. Besides, low power dissipation of 7.2 mW without buffer for 1.8 V supply voltage is also achieved.","PeriodicalId":137915,"journal":{"name":"2007 International Symposium on VLSI Design, Automation and Test (VLSI-DAT)","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122505595","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"On-Chip VDC Circuit for SRAM Power Management","authors":"C.F. Lee, W. Lin, F. Lai, S.C. Lin","doi":"10.1109/VDAT.2007.372757","DOIUrl":"https://doi.org/10.1109/VDAT.2007.372757","url":null,"abstract":"Leakage current becomes the dominant factor for contributing to the static power consumption. Power management technique is then required to bring down the power consumption. One of the most effective methods is to reduce the power supply voltage in the standby mode or in the power down active mode. In this paper, a simple on-chip voltage down converter is proposed. By designing an internal reference voltage that is proportional to the device threshold voltage, the SRAM cell circuit states can be preserved within a broad range of power supply and temperature. For the 1V-to-0.6V dc-dc conversion, this on-chip VDC only consumes 156 muW standby power and is within 2 mV output voltage variation for load current varying from 1 mu A to 10 mA. By comparing with other power management techniques, the on-chip VDC method is excellent in the static power saving, overall design simplicity and small layout area.","PeriodicalId":137915,"journal":{"name":"2007 International Symposium on VLSI Design, Automation and Test (VLSI-DAT)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116126932","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Power Gating Technique for Embedded Pseudo SRAM","authors":"Ching-Yun Cheng, Ming-Hung Chang, W. Hwang","doi":"10.1109/VDAT.2007.373251","DOIUrl":"https://doi.org/10.1109/VDAT.2007.373251","url":null,"abstract":"In this paper, we deploy power gating technique on a low-power Pseudo SRAM circuit with 3T1D gain cell. A 256-word x 32-BL-pair 3T1D gain cell array is implemented in standard logic technology with TSMC 0.13 um model for multi-bank Pseudo SRAM. Each Pseudo SRAM has its independent access control unit, enabling parallel refresh and read-write accesses to different bank. By employing power gating technique in sense amplifier of 3T1D gain cell array, 15% standby leakage current during sleep mode could be reduced. Also, 12% sensing speed could be enhanced when Pseudo SRAM is operated in normal mode (simulated with TSMC 100 nm technology model).","PeriodicalId":137915,"journal":{"name":"2007 International Symposium on VLSI Design, Automation and Test (VLSI-DAT)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122836826","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Hao-I Yang, Ming-Hung Chang, Ssu-Yun Lai, Hsiang-Fei Wang, W. Hwang
{"title":"A Low-Power Low-Swing Single-Ended Multi-Port SRAM","authors":"Hao-I Yang, Ming-Hung Chang, Ssu-Yun Lai, Hsiang-Fei Wang, W. Hwang","doi":"10.1109/VDAT.2007.373203","DOIUrl":"https://doi.org/10.1109/VDAT.2007.373203","url":null,"abstract":"In this paper, a new single-ended 6-T SRAM cell is proposed. It has a very strong static noise margin (SNM) during read cycles. Meanwhile, data can be easily written because of floating virtual ground and 1-T equalizer insertion within cell. Low-swing writing ability is achieved by these two approaches. A single-ended current-mode sensing amplifier is also presented. This amplifier can sense a very small swing of bitline, equipping with a high noise-rejection and high PVT-tolerance ability. A low-swing 3-port 64times32-bit SRAM macro is simulated in TSMC 130 nm CMOS technology. It consumes a minimum of 725 muW and 658 muW per-port at 1 GHz with 1.2 V supply voltage for read and write power, respectively.","PeriodicalId":137915,"journal":{"name":"2007 International Symposium on VLSI Design, Automation and Test (VLSI-DAT)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124384048","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A Self-Calibrated Multiphase DLL-Based Clock Generator","authors":"Hsin-Shu Chen, Chao-Ching Hung","doi":"10.1109/VDAT.2007.373237","DOIUrl":"https://doi.org/10.1109/VDAT.2007.373237","url":null,"abstract":"A delay-locked loop (DLL) Integrated with an analog self-calibration circuit is presented. The proposed DLL can generate precise multiphase clocks over process corners, voltage/temperature variations and device mismatches when incorporating with the calibration circuit and variable-delay output buffers. The experimental circuit in a standard 0.35-mum CMOS process demonstrates delay mismatch between phases can be reduced from tens of pico-second to less than ten pico-seconds at 100 MHz. The prototype circuit occupies an area of 2.1 mm2, and consumes around 10.1 mW at 3.3 V.","PeriodicalId":137915,"journal":{"name":"2007 International Symposium on VLSI Design, Automation and Test (VLSI-DAT)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133672648","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}