变增益均匀谐波混频器的理论分析与实现

J. Hsieh, Shuenn-Yuh Lee
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引用次数: 5

摘要

提出了一种新的IEEE 802.11 a变增益均匀谐波混频器(VGEHM)拓扑结构,其中包括一种NMOS双频电路(DFC)和一种PMOS有源负载(AL)拓扑结构。所提出的NMOS DFC可以消除直流偏置,提高隔离度。人工智能用于增加增益和实现宽增益变化。本文对转换增益和线性度进行了详细的理论分析。在TSMC CMOS 0.18 mum工艺中实现了该混频器,以评估其性能。根据5.25 GHz的射频和800 KHz的中频,测量结果表明,射频和本LO之间的隔离度为57.35 dB,可变转换增益在-28.02 dB和6.21 dB之间。同时,参考输入压缩点(IIPIdB)为-16 dBm,输入二阶截距点(IIP2)为17.66 dBm,输入三阶截距点(IIP3)为-3.945 dBm,也实现了高线性度。此外,在1.8 V电源电压下,无缓冲器的低功耗为7.2 mW。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Theoretical Analysis and Implementation of a Variable Gain Even Harmonic Mixer
This paper presents a new topology of variable gain even harmonic mixer (VGEHM) for IEEE 802.11 a, which includes a proposed NMOS double frequency circuit (DFC) and a PMOS active load (AL) topology. The proposed NMOS DFC can immunize the DC offset and increase isolation. The AL is used to increase gain and achieve wide-gain variation. In this paper, theoretical analyses of conversion gain and linearity have been described in detail. The proposed mixer is implemented in TSMC CMOS 0.18 mum process to evaluate its performance. The measured results, according to RF of 5.25 GHz and IF of 800 KHz, show the isolation of 57.35 dB between RF and LO, and the variable conversion gain between -28.02 dB and 6.21 dB. Meanwhile, the high linearity is also achieved by referring to input compression point (IIPIdB) of -16 dBm, input second order intercept point (IIP2) of 17.66 dBm, input third order intercept point (IIP3) of -3.945 dBm. Besides, low power dissipation of 7.2 mW without buffer for 1.8 V supply voltage is also achieved.
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