On-Chip VDC Circuit for SRAM Power Management

C.F. Lee, W. Lin, F. Lai, S.C. Lin
{"title":"On-Chip VDC Circuit for SRAM Power Management","authors":"C.F. Lee, W. Lin, F. Lai, S.C. Lin","doi":"10.1109/VDAT.2007.372757","DOIUrl":null,"url":null,"abstract":"Leakage current becomes the dominant factor for contributing to the static power consumption. Power management technique is then required to bring down the power consumption. One of the most effective methods is to reduce the power supply voltage in the standby mode or in the power down active mode. In this paper, a simple on-chip voltage down converter is proposed. By designing an internal reference voltage that is proportional to the device threshold voltage, the SRAM cell circuit states can be preserved within a broad range of power supply and temperature. For the 1V-to-0.6V dc-dc conversion, this on-chip VDC only consumes 156 muW standby power and is within 2 mV output voltage variation for load current varying from 1 mu A to 10 mA. By comparing with other power management techniques, the on-chip VDC method is excellent in the static power saving, overall design simplicity and small layout area.","PeriodicalId":137915,"journal":{"name":"2007 International Symposium on VLSI Design, Automation and Test (VLSI-DAT)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-04-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 International Symposium on VLSI Design, Automation and Test (VLSI-DAT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VDAT.2007.372757","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

Abstract

Leakage current becomes the dominant factor for contributing to the static power consumption. Power management technique is then required to bring down the power consumption. One of the most effective methods is to reduce the power supply voltage in the standby mode or in the power down active mode. In this paper, a simple on-chip voltage down converter is proposed. By designing an internal reference voltage that is proportional to the device threshold voltage, the SRAM cell circuit states can be preserved within a broad range of power supply and temperature. For the 1V-to-0.6V dc-dc conversion, this on-chip VDC only consumes 156 muW standby power and is within 2 mV output voltage variation for load current varying from 1 mu A to 10 mA. By comparing with other power management techniques, the on-chip VDC method is excellent in the static power saving, overall design simplicity and small layout area.
用于SRAM电源管理的片上直流电路
泄漏电流成为影响静态功耗的主要因素。然后需要电源管理技术来降低功耗。最有效的方法之一是在待机模式或关机主动模式下降低电源电压。本文提出了一种简单的片上降压变换器。通过设计一个与器件阈值电压成正比的内部参考电压,SRAM单元电路状态可以在很宽的电源和温度范围内保持。对于1v -0.6 VDC -dc转换,该片上VDC在负载电流从1 μ A到10 mA范围内,仅消耗156 muW待机功率,输出电压变化在2 mV以内。与其他电源管理技术相比,片上直流电方法具有静态省电、总体设计简单、布局面积小等优点。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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