1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)最新文献_第4页

GaAs LED based NIEL spectrometer for the space radiation environment 基于GaAs LED的空间辐射环境NIEL光谱仪

1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI: 10.1109/RADECS.1999.858560

A. Houdayer, P. Hinrichsen, A. L. Barry, A. Ng

引用次数: 8

Amorphization of silicon via electronic processes induced by fullerenes irradiations 富勒烯辐照诱导的硅非晶化过程

1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI: 10.1109/RADECS.1999.858544

B. Canut, N. Bonardi, S. Ramos, S. Della-Negra

引用次数: 0

Improving the radiation hardness properties of silicon detectors using oxygenated n-type and p-type silicon 利用氧化n型和p型硅改善硅探测器的辐射硬度性能

1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI: 10.1109/RADECS.1999.858558

G. Casse, P. Allport, M. Hanlon

{"title":"Improving the radiation hardness properties of silicon detectors using oxygenated n-type and p-type silicon","authors":"G. Casse, P. Allport, M. Hanlon","doi":"10.1109/RADECS.1999.858558","DOIUrl":"https://doi.org/10.1109/RADECS.1999.858558","url":null,"abstract":"The degradation of the electrical properties of silicon detectors exposed to 24 GeV/c protons were studied using pad diodes made from different silicon materials. Standard high-grade p-type and n-type substrates and oxygenated n-type substrates have been used. The diodes were studied in terms of reverse current (I/sub r/) and full depletion voltage (V/sub fd/) as a function of fluence. The oxygenated devices from different suppliers with a variety of starting materials and techniques, all show a consistent improvement of the degradation rate of V/sub fd/ and CCE compared to un-oxygenated substrate devices. Radiation damage of n-type detectors introduces stable defects acting as effective p-type doping and leads to the change of the conductivity type of the silicon bulk (type inversion) at a neutron equivalent fluence of a few 10/sup 13/ cm/sup -2/. The diode junction after inversion migrates from the original side to the back plane of the detector. The migration of the junction is avoided using silicon detectors with p-type substrate. Furthermore, the use of n-side readout allows a better charge collection in segmented devices operated in underdepleted mode. Large area (/spl ap/6.4/spl times/6.4 cm/sup 2/) 80 /spl mu/m pitch microstrip capacitively coupled detectors with polysilicon bias resistors made on p-type substrate with a n-i-p diode structure have been irradiated up to 3/spl middot/10/sup 14/ cm/sup -2/. We present results both before and after irradiation demonstrating the feasibility of using such devices at the Large Hadron Collider (LHC) at CERN.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"97 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127168869","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 51

Circuit-level model for single-event burnout in N-channel power MOSFET's n沟道功率MOSFET单事件烧断的电路级模型

1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI: 10.1109/RADECS.1999.858572

Jinhong Liu, peixiong zhao, L. Massengill, K. Galloway, J. Attia

引用次数: 6

Observations on the reliability of COTS-device-based solid state data recorders operating in low-Earth orbit 在近地轨道上运行的基于cots装置的固态数据记录仪的可靠性观测

1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI: 10.1109/RADECS.1999.858613

Craig Underwood, M. Oldfield

引用次数: 22

Charge-collection efficiency of GaAs field effect transistors fabricated with a low-temperature grown buffer layer: dependence on charge deposition profile 低温生长缓冲层制备的GaAs场效应晶体管的电荷收集效率:与电荷沉积曲线的关系

1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI: 10.1109/RADECS.1999.858547

D. McMorrow, A. Knudson, J. Melinger, S. Buchner

引用次数: 4

Development of a 10 kGy(Si) rad hard controller for mobile robot using COTS 基于COTS的移动机器人10kgy (Si) rad硬控制器的研制

1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI: 10.1109/RADECS.1999.858614

J. Alexandre, M. Marceau

引用次数: 2

Predicting the radiation induced loss in Ge doped optical fibres at different temperatures 预测不同温度下掺锗光纤的辐射损耗

1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI: 10.1109/RADECS.1999.858629

R. H. West

引用次数: 12

Total dose hardness of a commercial SiGe BiCMOS technology 商用SiGe BiCMOS技术的总剂量硬度

1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI: 10.1109/RADECS.1999.858617

N. V. van Vonno, R. Lucas, D. Thornberry

引用次数: 4

Single event upsets in the dual-port-board SRAMs of the MPTB experiment MPTB实验中双端口板sram的单事件扰动

1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI: 10.1109/RADECS.1999.858651

J. Barak, J. Barth, C. Seidleck, C. Marshall, P. Marshall, M. Carts, R. Reed

引用次数: 18