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1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)最新文献

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Predicting the radiation induced loss in Ge doped optical fibres at different temperatures 预测不同温度下掺锗光纤的辐射损耗
1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI: 10.1109/RADECS.1999.858629
R. H. West
{"title":"Predicting the radiation induced loss in Ge doped optical fibres at different temperatures","authors":"R. H. West","doi":"10.1109/RADECS.1999.858629","DOIUrl":"https://doi.org/10.1109/RADECS.1999.858629","url":null,"abstract":"A new method is described for predicting radiation induced losses in Ge doped optical fibres at various temperatures. Some physical justification is given for the recovery model employed, and model calculations are compared with experimental results.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"450 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116407600","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
Total dose hardness of a commercial SiGe BiCMOS technology 商用SiGe BiCMOS技术的总剂量硬度
1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI: 10.1109/RADECS.1999.858617
N. V. van Vonno, R. Lucas, D. Thornberry
{"title":"Total dose hardness of a commercial SiGe BiCMOS technology","authors":"N. V. van Vonno, R. Lucas, D. Thornberry","doi":"10.1109/RADECS.1999.858617","DOIUrl":"https://doi.org/10.1109/RADECS.1999.858617","url":null,"abstract":"Over the past decade SiGe HBT technology has progressed from the laboratory to practical commercial applications. When integrated into a CMOS process, this technology has potential applications in low-cost space systems. In this paper, we report results of total ionizing dose testing of a SiGe/CMOS process accessible through a commercial foundry.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121766284","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Single event upsets in the dual-port-board SRAMs of the MPTB experiment MPTB实验中双端口板sram的单事件扰动
1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI: 10.1109/RADECS.1999.858651
J. Barak, J. Barth, C. Seidleck, C. Marshall, P. Marshall, M. Carts, R. Reed
{"title":"Single event upsets in the dual-port-board SRAMs of the MPTB experiment","authors":"J. Barak, J. Barth, C. Seidleck, C. Marshall, P. Marshall, M. Carts, R. Reed","doi":"10.1109/RADECS.1999.858651","DOIUrl":"https://doi.org/10.1109/RADECS.1999.858651","url":null,"abstract":"The in-flight data of SEUs in the devices of panels B and C of the MPTB experiments are presented. Ground test data for M65656 are used to calculate the SEU rates in this device using the calculated flux of ions along the orbit. The models used are CREME96, simple expressions derived here, and the figure of merit model. A very good agreement is found between these calculations and the observed rates.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121931942","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 18
The orbiting technology testbed (OTTI) space experiments 轨道技术试验台(OTTI)空间实验
1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI: 10.1109/RADECS.1999.858536
D. A. Brewer, K.A. Lassel, J. Ritter, J. Barth, K. Clifton, J. Peden, A. Campbell
{"title":"The orbiting technology testbed (OTTI) space experiments","authors":"D. A. Brewer, K.A. Lassel, J. Ritter, J. Barth, K. Clifton, J. Peden, A. Campbell","doi":"10.1109/RADECS.1999.858536","DOIUrl":"https://doi.org/10.1109/RADECS.1999.858536","url":null,"abstract":"Future science, operational, and commercial objectives in space can only be accomplished within cost and schedule constraints by rapidly developing and infusing new technology into missions, improving the capability to reliably predict performance in the space environment, and reducing operational costs. A trade study was performed to determine the optimum combination of space and ground developments and validations needed to accomplish these goals. A concept for a program, the orbiting technology testbed initiative (OTTI), was defined to address these goals. Results of the trade study and the resultant OTTI concept are described below.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125531660","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Optimised stacked RADFETs for micro-gray dose measurement 用于微灰剂量测量的优化叠置radfet
1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI: 10.1109/RADECS.1999.858553
B. O'Connell, C. Mccarthy, B. Lane, A. Mohammadzadeh
{"title":"Optimised stacked RADFETs for micro-gray dose measurement","authors":"B. O'Connell, C. Mccarthy, B. Lane, A. Mohammadzadeh","doi":"10.1109/RADECS.1999.858553","DOIUrl":"https://doi.org/10.1109/RADECS.1999.858553","url":null,"abstract":"This paper details the improvements in the design of stacked RADFETs for lower initial (pre-irradiation) output voltage (Vo) magnitude as well as increased radiation sensitivity. The issue of high read-out voltage has been shown to be a drawback. It is the body (bulk) effect factor that is responsible for the increased overall stack threshold voltage (V/sub T/), which is greater than the sum of the individual devices V/sub T/. This same body effect is the factor responsible for increased radiation sensitivity of stacked devices. From extensive process and device simulation and resultant circuit simulation, modified stack structures have been proposed and designed. New results of lower initial (preirradiation) output voltage as well as increased radiation sensitivity are presented here. Results in this work show radiation sensitivity values of 8.5 mV/mGy achieved with 15 stacked devices of 3060/13 W/L (/spl mu/m) geometry, with an initial output voltage of <10 V.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127134896","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Use of pre-irradiated commercial MOSFETs in a power supply hardened to withstand gamma radiation 在电源中使用预辐照的商用mosfet，使其能够承受伽马辐射
1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI: 10.1109/RADECS.1999.858610
M. Marceau, H. Huillet, P. Marchand
{"title":"Use of pre-irradiated commercial MOSFETs in a power supply hardened to withstand gamma radiation","authors":"M. Marceau, H. Huillet, P. Marchand","doi":"10.1109/RADECS.1999.858610","DOIUrl":"https://doi.org/10.1109/RADECS.1999.858610","url":null,"abstract":"This article describes the approach used to design a hardened power supply capable of operating to a total gamma irradiation dose of 1Mrad(Si). Pre-irradiation of power MOSFETs proved to be necessary, and the paper also discusses the effects of this treatment.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128816797","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Total dose behavior of partially depleted SOI dynamic threshold voltage MOS (DTMOS) for very low supply voltage applications (0.6-1 V) 部分耗尽SOI动态阈值电压MOS (DTMOS)在极低电源电压(0.6-1 V)下的总剂量行为
1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI: 10.1109/RADECS.1999.858600
V. Ferlet-Cavrois, P. Paillet, O. Musseau, J. Leray, O. Faynot, C. Raynaud, J. Pelloie
{"title":"Total dose behavior of partially depleted SOI dynamic threshold voltage MOS (DTMOS) for very low supply voltage applications (0.6-1 V)","authors":"V. Ferlet-Cavrois, P. Paillet, O. Musseau, J. Leray, O. Faynot, C. Raynaud, J. Pelloie","doi":"10.1109/RADECS.1999.858600","DOIUrl":"https://doi.org/10.1109/RADECS.1999.858600","url":null,"abstract":"The DTMOS architecture is particularly suited to very low supply voltage applications (0.6-1V). This paper presents DTMOS devices processed with a partially depleted 0.25 /spl mu/m SOI technology. It analyses their electrical behavior under total dose irradiation.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123901109","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Quantification, modelling and design for signal history dependent effects in mixed-signal SOI/SOS circuits 混合信号SOI/SOS电路中信号历史依赖效应的量化、建模和设计
1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI: 10.1109/RADECS.1999.858601
C. F. Edwards, W. Redman-White, M. Bracey, B. Tenbroek, M.S.L. Lee, M. Uren, K. Brunson
{"title":"Quantification, modelling and design for signal history dependent effects in mixed-signal SOI/SOS circuits","authors":"C. F. Edwards, W. Redman-White, M. Bracey, B. Tenbroek, M.S.L. Lee, M. Uren, K. Brunson","doi":"10.1109/RADECS.1999.858601","DOIUrl":"https://doi.org/10.1109/RADECS.1999.858601","url":null,"abstract":"Starting from the basis that device matching is central to most analogue designs, the effects of static and dynamic signal history dependence on post-radiation device characteristics and analogue circuit cell performance are examined. The effects of unbalanced static and dynamic bias signals on matched devices subject to radiation is studied. Behavioural models for comparator cells and complete analogue to digital (A/D) converters are developed to assess the impact at cell and system level. New circuit design techniques are used too in the implementation of a 7-bit flash A/D converter fabricated in 1.5 /spl mu/m SOI/SOS CMOS; and measurements confirm that performance remains consistent up to very high dose levels.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126703678","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Radiation tolerant design-theory and practice for proximity sensing 近距离感应耐辐射设计理论与实践
1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI: 10.1109/RADECS.1999.858611
R. Sharp, S. Pater, J. Cook
{"title":"Radiation tolerant design-theory and practice for proximity sensing","authors":"R. Sharp, S. Pater, J. Cook","doi":"10.1109/RADECS.1999.858611","DOIUrl":"https://doi.org/10.1109/RADECS.1999.858611","url":null,"abstract":"This paper provides a description of the radiation tolerant design process used to develop a range of inductive proximity detectors with guaranteed total dose lifetime. The types of detector that have been developed and their various performance differences, including radiation tolerance, are outlined. It also describes some of the applications in which the detectors are being used and the benefits that can be gained by plant operators when using radiation tolerant detectors in place of conventional types.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114418487","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Evidences of SEU tolerance for digital implementations of artificial neural networks: one year MPTB flight results 人工神经网络数字化实现的SEU容忍度证据:一年MPTB飞行结果
1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI: 10.1109/RADECS.1999.858648
R. Velazco, P. Cheynet, A. Tissot, J. Haussy, J. Lambert, R. Ecoffet
{"title":"Evidences of SEU tolerance for digital implementations of artificial neural networks: one year MPTB flight results","authors":"R. Velazco, P. Cheynet, A. Tissot, J. Haussy, J. Lambert, R. Ecoffet","doi":"10.1109/RADECS.1999.858648","DOIUrl":"https://doi.org/10.1109/RADECS.1999.858648","url":null,"abstract":"The Microelectronics and Photonics Testbed (MPTB) carrying twenty-four experiments on-board a scientific satellite has been in a high radiation orbit since November 1997. This paper presents one year flight results of two of these experiments programmed to emulate an Artificial Neural Network (ANN) devoted to texture analysis. Telemeterd data provide evidences of the ANN intrinsic fault tolerance properties.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114854474","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
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