富勒烯辐照诱导的硅非晶化过程

1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI:10.1109/RADECS.1999.858544

B. Canut, N. Bonardi, S. Ramos, S. Della-Negra

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引用次数: 0

摘要

我们首次证明了单晶硅对集体电子激发是敏感的。在10 MeV范围内加速辐照C/sub 60/团簇可诱导该材料形成无定形潜径迹。

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Amorphization of silicon via electronic processes induced by fullerenes irradiations

For the first time we show that single crystalline silicon is sensitive to collective electronic excitations. Irradiations with C/sub 60/ clusters accelerated in the 10 MeV range induce the formation of amorphous latent tracks in this material.

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1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)

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