MPTB实验中双端口板sram的单事件扰动

1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI:10.1109/RADECS.1999.858651

J. Barak, J. Barth, C. Seidleck, C. Marshall, P. Marshall, M. Carts, R. Reed

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引用次数: 18

摘要

给出了MPTB实验中B、C两组器件中seu的飞行数据。利用M65656的地面试验数据，利用计算出的离子沿轨道通量，计算出该装置的SEU率。使用的模型是CREME96，这里导出的简单表达式，以及功绩图模型。这些计算结果与观测到的速率非常吻合。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Single event upsets in the dual-port-board SRAMs of the MPTB experiment

The in-flight data of SEUs in the devices of panels B and C of the MPTB experiments are presented. Ground test data for M65656 are used to calculate the SEU rates in this device using the calculated flux of ions along the orbit. The models used are CREME96, simple expressions derived here, and the figure of merit model. A very good agreement is found between these calculations and the observed rates.

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来源期刊

1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)

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