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1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)最新文献

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The orbiting technology testbed (OTTI) space experiments 轨道技术试验台(OTTI)空间实验
1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI: 10.1109/RADECS.1999.858536
D. A. Brewer, K.A. Lassel, J. Ritter, J. Barth, K. Clifton, J. Peden, A. Campbell
{"title":"The orbiting technology testbed (OTTI) space experiments","authors":"D. A. Brewer, K.A. Lassel, J. Ritter, J. Barth, K. Clifton, J. Peden, A. Campbell","doi":"10.1109/RADECS.1999.858536","DOIUrl":"https://doi.org/10.1109/RADECS.1999.858536","url":null,"abstract":"Future science, operational, and commercial objectives in space can only be accomplished within cost and schedule constraints by rapidly developing and infusing new technology into missions, improving the capability to reliably predict performance in the space environment, and reducing operational costs. A trade study was performed to determine the optimum combination of space and ground developments and validations needed to accomplish these goals. A concept for a program, the orbiting technology testbed initiative (OTTI), was defined to address these goals. Results of the trade study and the resultant OTTI concept are described below.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125531660","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Optimised stacked RADFETs for micro-gray dose measurement 用于微灰剂量测量的优化叠置radfet
1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI: 10.1109/RADECS.1999.858553
B. O'Connell, C. Mccarthy, B. Lane, A. Mohammadzadeh
{"title":"Optimised stacked RADFETs for micro-gray dose measurement","authors":"B. O'Connell, C. Mccarthy, B. Lane, A. Mohammadzadeh","doi":"10.1109/RADECS.1999.858553","DOIUrl":"https://doi.org/10.1109/RADECS.1999.858553","url":null,"abstract":"This paper details the improvements in the design of stacked RADFETs for lower initial (pre-irradiation) output voltage (Vo) magnitude as well as increased radiation sensitivity. The issue of high read-out voltage has been shown to be a drawback. It is the body (bulk) effect factor that is responsible for the increased overall stack threshold voltage (V/sub T/), which is greater than the sum of the individual devices V/sub T/. This same body effect is the factor responsible for increased radiation sensitivity of stacked devices. From extensive process and device simulation and resultant circuit simulation, modified stack structures have been proposed and designed. New results of lower initial (preirradiation) output voltage as well as increased radiation sensitivity are presented here. Results in this work show radiation sensitivity values of 8.5 mV/mGy achieved with 15 stacked devices of 3060/13 W/L (/spl mu/m) geometry, with an initial output voltage of <10 V.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127134896","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Use of pre-irradiated commercial MOSFETs in a power supply hardened to withstand gamma radiation 在电源中使用预辐照的商用mosfet，使其能够承受伽马辐射
1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI: 10.1109/RADECS.1999.858610
M. Marceau, H. Huillet, P. Marchand
{"title":"Use of pre-irradiated commercial MOSFETs in a power supply hardened to withstand gamma radiation","authors":"M. Marceau, H. Huillet, P. Marchand","doi":"10.1109/RADECS.1999.858610","DOIUrl":"https://doi.org/10.1109/RADECS.1999.858610","url":null,"abstract":"This article describes the approach used to design a hardened power supply capable of operating to a total gamma irradiation dose of 1Mrad(Si). Pre-irradiation of power MOSFETs proved to be necessary, and the paper also discusses the effects of this treatment.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128816797","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Total dose behavior of partially depleted SOI dynamic threshold voltage MOS (DTMOS) for very low supply voltage applications (0.6-1 V) 部分耗尽SOI动态阈值电压MOS (DTMOS)在极低电源电压(0.6-1 V)下的总剂量行为
1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI: 10.1109/RADECS.1999.858600
V. Ferlet-Cavrois, P. Paillet, O. Musseau, J. Leray, O. Faynot, C. Raynaud, J. Pelloie
{"title":"Total dose behavior of partially depleted SOI dynamic threshold voltage MOS (DTMOS) for very low supply voltage applications (0.6-1 V)","authors":"V. Ferlet-Cavrois, P. Paillet, O. Musseau, J. Leray, O. Faynot, C. Raynaud, J. Pelloie","doi":"10.1109/RADECS.1999.858600","DOIUrl":"https://doi.org/10.1109/RADECS.1999.858600","url":null,"abstract":"The DTMOS architecture is particularly suited to very low supply voltage applications (0.6-1V). This paper presents DTMOS devices processed with a partially depleted 0.25 /spl mu/m SOI technology. It analyses their electrical behavior under total dose irradiation.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123901109","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Quantification, modelling and design for signal history dependent effects in mixed-signal SOI/SOS circuits 混合信号SOI/SOS电路中信号历史依赖效应的量化、建模和设计
1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI: 10.1109/RADECS.1999.858601
C. F. Edwards, W. Redman-White, M. Bracey, B. Tenbroek, M.S.L. Lee, M. Uren, K. Brunson
{"title":"Quantification, modelling and design for signal history dependent effects in mixed-signal SOI/SOS circuits","authors":"C. F. Edwards, W. Redman-White, M. Bracey, B. Tenbroek, M.S.L. Lee, M. Uren, K. Brunson","doi":"10.1109/RADECS.1999.858601","DOIUrl":"https://doi.org/10.1109/RADECS.1999.858601","url":null,"abstract":"Starting from the basis that device matching is central to most analogue designs, the effects of static and dynamic signal history dependence on post-radiation device characteristics and analogue circuit cell performance are examined. The effects of unbalanced static and dynamic bias signals on matched devices subject to radiation is studied. Behavioural models for comparator cells and complete analogue to digital (A/D) converters are developed to assess the impact at cell and system level. New circuit design techniques are used too in the implementation of a 7-bit flash A/D converter fabricated in 1.5 /spl mu/m SOI/SOS CMOS; and measurements confirm that performance remains consistent up to very high dose levels.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126703678","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Radiation tolerant design-theory and practice for proximity sensing 近距离感应耐辐射设计理论与实践
1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI: 10.1109/RADECS.1999.858611
R. Sharp, S. Pater, J. Cook
{"title":"Radiation tolerant design-theory and practice for proximity sensing","authors":"R. Sharp, S. Pater, J. Cook","doi":"10.1109/RADECS.1999.858611","DOIUrl":"https://doi.org/10.1109/RADECS.1999.858611","url":null,"abstract":"This paper provides a description of the radiation tolerant design process used to develop a range of inductive proximity detectors with guaranteed total dose lifetime. The types of detector that have been developed and their various performance differences, including radiation tolerance, are outlined. It also describes some of the applications in which the detectors are being used and the benefits that can be gained by plant operators when using radiation tolerant detectors in place of conventional types.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114418487","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Evidences of SEU tolerance for digital implementations of artificial neural networks: one year MPTB flight results 人工神经网络数字化实现的SEU容忍度证据:一年MPTB飞行结果
1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI: 10.1109/RADECS.1999.858648
R. Velazco, P. Cheynet, A. Tissot, J. Haussy, J. Lambert, R. Ecoffet
{"title":"Evidences of SEU tolerance for digital implementations of artificial neural networks: one year MPTB flight results","authors":"R. Velazco, P. Cheynet, A. Tissot, J. Haussy, J. Lambert, R. Ecoffet","doi":"10.1109/RADECS.1999.858648","DOIUrl":"https://doi.org/10.1109/RADECS.1999.858648","url":null,"abstract":"The Microelectronics and Photonics Testbed (MPTB) carrying twenty-four experiments on-board a scientific satellite has been in a high radiation orbit since November 1997. This paper presents one year flight results of two of these experiments programmed to emulate an Artificial Neural Network (ANN) devoted to texture analysis. Telemeterd data provide evidences of the ANN intrinsic fault tolerance properties.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114854474","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
ESA's tools for internal charging 欧空局内部充电工具
1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI: 10.1109/RADECS.1999.858540
J. Sorensen, D. Rodgers, K. Ryden, P. Latham, G. Wrenn, L. Levy, G. Panabiere
{"title":"ESA's tools for internal charging","authors":"J. Sorensen, D. Rodgers, K. Ryden, P. Latham, G. Wrenn, L. Levy, G. Panabiere","doi":"10.1109/RADECS.1999.858540","DOIUrl":"https://doi.org/10.1109/RADECS.1999.858540","url":null,"abstract":"Electrostatic discharges, caused by bulk charging of spacecraft insulating materials, are a major cause of satellite anomalies. A quantitative knowledge of the charge build-up is essential in order to eliminate these problems in the design stage. This is a presentation of ESA's tools to assess whether a given structure is liable to experience electrostatic discharges or not. A study has been made of the physical phenomenon, and an engineering specification has been created to be used to assess a structure for potential discharge problems. The specification has been implemented in new software, DICTAT. The implementation of tests in dedicated facilities is an important part of the specification, and tests have been performed to validate the new tool.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122034217","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 52
Diamond gamma dose rate monitor 金刚石剂量率监测器
1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI: 10.1109/RADECS.1999.858556
A. Brambilla, P. Chambaud, D. Tromson, P. Bergonzo, F. Foulon
{"title":"Diamond gamma dose rate monitor","authors":"A. Brambilla, P. Chambaud, D. Tromson, P. Bergonzo, F. Foulon","doi":"10.1109/RADECS.1999.858556","DOIUrl":"https://doi.org/10.1109/RADECS.1999.858556","url":null,"abstract":"Chemical vapour deposition (CVD) diamond X- and gamma-rays detectors for dose and dose rate monitoring were fabricated and tested in the 1 mGy/h to 1 kGy/h range. They show excellent performances in terms of sensitivity and linearity and have been operated at temperatures up to 100/spl deg/C. Low dose measurements have also been performed in the pulse mode. Further, radiation hardness measurements under /sup 60/Co gamma rays have demonstrated long term stability for integrated doses up to 500 kGy. The presented results demonstrate the potential of CVD diamond towards radiation detection in harsh temperature and radiation environment.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125409906","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Total dose and RT annealing effects on startup current transient in antifuse FPGA 总剂量和RT退火对反熔丝FPGA启动电流瞬态的影响
1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI: 10.1109/RADECS.1999.858594
J. Wang, R. Katz, I. Kleyner, F. Kleyner, J. Sun, W. Wong, J. Mccollum, B. Cronquist
{"title":"Total dose and RT annealing effects on startup current transient in antifuse FPGA","authors":"J. Wang, R. Katz, I. Kleyner, F. Kleyner, J. Sun, W. Wong, J. Mccollum, B. Cronquist","doi":"10.1109/RADECS.1999.858594","DOIUrl":"https://doi.org/10.1109/RADECS.1999.858594","url":null,"abstract":"The startup current in an antifuse field programmable gate array (FPGA) device, A1280A, is investigated in the context of ionizing radiation effects. If properly measured, a radiation induced startup transient (RIST) can be identified after certain amount of irradiation. RIST increases with total dose (TID), and is strongly dependent on the dose rate. Room-temperature biased annealing for few days can reduce RIST to a very low level. A transistor-level mechanism is proposed to elucidate the origin of RIST. The ionization induced leakage in the NMOS diode is believed to be the root cause. The degradation of the ramping speed of the charge pump causes RIST when powering up the device. SPICE simulation was also performed to demonstrate the slow down of the ramping speed by the leakage in the NMOS diode. In typical low-dose-rate space environments, RIST is not the limiting factor for the total dose tolerance.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126194683","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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