Quantification, modelling and design for signal history dependent effects in mixed-signal SOI/SOS circuits

C. F. Edwards, W. Redman-White, M. Bracey, B. Tenbroek, M.S.L. Lee, M. Uren, K. Brunson
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引用次数: 0

Abstract

Starting from the basis that device matching is central to most analogue designs, the effects of static and dynamic signal history dependence on post-radiation device characteristics and analogue circuit cell performance are examined. The effects of unbalanced static and dynamic bias signals on matched devices subject to radiation is studied. Behavioural models for comparator cells and complete analogue to digital (A/D) converters are developed to assess the impact at cell and system level. New circuit design techniques are used too in the implementation of a 7-bit flash A/D converter fabricated in 1.5 /spl mu/m SOI/SOS CMOS; and measurements confirm that performance remains consistent up to very high dose levels.
混合信号SOI/SOS电路中信号历史依赖效应的量化、建模和设计
从器件匹配是大多数模拟设计的核心基础出发,研究了静态和动态信号历史对辐射后器件特性和模拟电路单元性能的影响。研究了不平衡的静态和动态偏置信号对受辐射作用的匹配器件的影响。为比较细胞和完全模拟数字(A/D)转换器开发了行为模型,以评估细胞和系统水平的影响。在1.5 /spl mu/m SOI/SOS CMOS制作的7位闪存a /D转换器的实现中也采用了新的电路设计技术;测量结果证实,即使在非常高的剂量水平下,其性能仍保持一致。
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