在电源中使用预辐照的商用mosfet，使其能够承受伽马辐射

1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI:10.1109/RADECS.1999.858610

M. Marceau, H. Huillet, P. Marchand

{"title":"在电源中使用预辐照的商用mosfet，使其能够承受伽马辐射","authors":"M. Marceau, H. Huillet, P. Marchand","doi":"10.1109/RADECS.1999.858610","DOIUrl":null,"url":null,"abstract":"This article describes the approach used to design a hardened power supply capable of operating to a total gamma irradiation dose of 1Mrad(Si). Pre-irradiation of power MOSFETs proved to be necessary, and the paper also discusses the effects of this treatment.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Use of pre-irradiated commercial MOSFETs in a power supply hardened to withstand gamma radiation\",\"authors\":\"M. Marceau, H. Huillet, P. Marchand\",\"doi\":\"10.1109/RADECS.1999.858610\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This article describes the approach used to design a hardened power supply capable of operating to a total gamma irradiation dose of 1Mrad(Si). Pre-irradiation of power MOSFETs proved to be necessary, and the paper also discusses the effects of this treatment.\",\"PeriodicalId\":135784,\"journal\":{\"name\":\"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)\",\"volume\":\"34 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-09-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RADECS.1999.858610\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RADECS.1999.858610","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

本文描述了用于设计能够在总γ照射剂量为1Mrad(Si)的情况下工作的硬化电源的方法。对功率场效应管进行预辐照是必要的，并讨论了预辐照的效果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Use of pre-irradiated commercial MOSFETs in a power supply hardened to withstand gamma radiation

This article describes the approach used to design a hardened power supply capable of operating to a total gamma irradiation dose of 1Mrad(Si). Pre-irradiation of power MOSFETs proved to be necessary, and the paper also discusses the effects of this treatment.

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来源期刊

1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)

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