1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)最新文献

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Study of basic mechanisms induced by an ionizing particle on simple structures 电离粒子对简单结构诱导的基本机制研究
G. Hubert, J. Palau, P. Roche, B. Sagnes, J. Gasiot, M. Calvet
{"title":"Study of basic mechanisms induced by an ionizing particle on simple structures","authors":"G. Hubert, J. Palau, P. Roche, B. Sagnes, J. Gasiot, M. Calvet","doi":"10.1109/RADECS.1999.858551","DOIUrl":"https://doi.org/10.1109/RADECS.1999.858551","url":null,"abstract":"The currents induced by an ionizing particle in a diode and a bar are compared. A short track, located within the structure, and a long track passing through it are considered. Analysis of the mechanisms involved is proposed to explain why the observed effects are approximately the same.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127436253","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 32
Components off the shelf selection for nuclear industry environment greater than 100 kGy(Si) 大于100 kGy(Si)的核工业环境用组件的现货选择
J.D. Saussine, D. Hamonic, E. Feuilloley, O. Feuillatre
{"title":"Components off the shelf selection for nuclear industry environment greater than 100 kGy(Si)","authors":"J.D. Saussine, D. Hamonic, E. Feuilloley, O. Feuillatre","doi":"10.1109/RADECS.1999.858619","DOIUrl":"https://doi.org/10.1109/RADECS.1999.858619","url":null,"abstract":"This paper presents total dose test results of Components Off The Shelf (COTS), greater than 100 kGy(Si), for nuclear industry applications. Tested components are bipolar analog integrated circuits (operational amplifiers, regulators) and bipolar logic integrated circuits (TTL-LS and ECL technologies).","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128420926","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Radiation effects in ultraviolet sensitive SiC photodiodes 紫外敏感SiC光电二极管的辐射效应
S. Metzger, H. Henschel, O. Kohn, W. Lennartz
{"title":"Radiation effects in ultraviolet sensitive SiC photodiodes","authors":"S. Metzger, H. Henschel, O. Kohn, W. Lennartz","doi":"10.1109/RADECS.1999.858624","DOIUrl":"https://doi.org/10.1109/RADECS.1999.858624","url":null,"abstract":"We tested SiC photodiodes with Co-60 gammas, 32 MeV protons and 14 MeV neutrons. The UV-photocurrent decreased to about 50% of its initial value at a total gamma dose of 40 kGy (Air). Nearly the same decrease was observed during proton irradiations of 9/spl times/10/sup 12/ cm/sup -2/. But after a neutron fluence of 1.5/spl times/10/sup 13/ cm/sup -2/ the signal was still 85% of that before irradiation. It is shown that the decrease of the photocurrent is caused by darkening of the glass window. Some of the color-centres could be annealed with the intense UV-light of a deuterium lamp. Furthermore hydrogen treatment of the photodiode reduces the radiation effects by about 20%.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129747062","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
SPICE modeling of the transient response of irradiated MOSFETs 辐照mosfet瞬态响应的SPICE建模
V. Pouget, H. Lapuyade, D. Lewis, Y. Deval, P. Fouillat, L. Sarger
{"title":"SPICE modeling of the transient response of irradiated MOSFETs","authors":"V. Pouget, H. Lapuyade, D. Lewis, Y. Deval, P. Fouillat, L. Sarger","doi":"10.1109/RADECS.1999.858548","DOIUrl":"https://doi.org/10.1109/RADECS.1999.858548","url":null,"abstract":"A new SPICE model of irradiated MOSFET taking into account the real response of the four electrodes is proposed. A comparison between SPICE-generated transient response and PISCES device simulation demonstrates the accuracy benefits when used in complex electronic architectures.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"92 12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125694950","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 28
Electrical and optical analysis of low fluence fast neutron damage to JFETs 低通量快中子对jfet损伤的电学和光学分析
S. Forster, A. Hoffmann, J. Charles, S. Kerns, D. Kerns, M. de la Bardonnie, P. Mialhe
{"title":"Electrical and optical analysis of low fluence fast neutron damage to JFETs","authors":"S. Forster, A. Hoffmann, J. Charles, S. Kerns, D. Kerns, M. de la Bardonnie, P. Mialhe","doi":"10.1109/RADECS.1999.858633","DOIUrl":"https://doi.org/10.1109/RADECS.1999.858633","url":null,"abstract":"The effects of fast neutron irradiation (30 MeV) on silicon n-channel JFETs are studied. Electrical parameters of the gate-channel junction are analyzed at several fluences using a custom software. Electrical parameter changes are attributed to bulk semiconductor defects. Irradiation effects on passivation overlayers are evaluated using analysis of gate-channel junction electroluminescence.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123376745","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A compact electrostatic charging monitor for spacecraft 一种用于航天器的紧凑型静电充电监测器
K. Ryden, H. Jolly, A. Frydland, P. Morris
{"title":"A compact electrostatic charging monitor for spacecraft","authors":"K. Ryden, H. Jolly, A. Frydland, P. Morris","doi":"10.1109/RADECS.1999.858559","DOIUrl":"https://doi.org/10.1109/RADECS.1999.858559","url":null,"abstract":"A new instrument for monitoring both surface and internal charging effects on-board a spacecraft is described. The aim of the instrument is to provide a reliable diagnostic tool that can be flown on long-life operational satellites where severe mass, power and accommodation restrictions usually prevent the installation of more complex devices. A brief review of the charging hazard to spacecraft is provided followed by a description of the instrument's basic design in which electrical analogues of the charging of insulating materials are set up. Ultra-high-value resistors (up to 10/sup 14/ /spl Omega/) are employed in order to simulate the properties of a dielectric. Results from electron beam charging tests are provided which demonstrate the validity of the approach.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116939827","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 15
Measurements of lead tungstate crystals behaviour under irradiation for the CMS electromagnetic calorimeter at the LHC 大型强子对撞机CMS电磁量热计辐照下钨酸铅晶体行为的测量
F. Nessi-Tedaldi
{"title":"Measurements of lead tungstate crystals behaviour under irradiation for the CMS electromagnetic calorimeter at the LHC","authors":"F. Nessi-Tedaldi","doi":"10.1109/RADECS.1999.858585","DOIUrl":"https://doi.org/10.1109/RADECS.1999.858585","url":null,"abstract":"Lead tungstate crystals will be used as calorimetric medium in high energy physics at CERN, in a particularly hostile radiation environment. Methods of testing their behaviour under irradiation are discussed here and are illustrated by some R&D results.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"2013 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128009472","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Low energy proton testing of space electronics at "JULIC" “JULIC”空间电子低能质子测试
S. Metzger, H. Boge, W. Brautigam, R. Brings, N. Gad, H. Henschel, O. Kohn, W. Lennartz, H. Probst
{"title":"Low energy proton testing of space electronics at \"JULIC\"","authors":"S. Metzger, H. Boge, W. Brautigam, R. Brings, N. Gad, H. Henschel, O. Kohn, W. Lennartz, H. Probst","doi":"10.1109/RADECS.1999.858570","DOIUrl":"https://doi.org/10.1109/RADECS.1999.858570","url":null,"abstract":"A proton irradiation facility was built under collaboration between the Fraunhofer-INT and the Nuclear Physics Institute of the Research Centre Julich (formerly KFA Julich). It is designated for the testing of space electronics with low to medium energy protons.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"308 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114057139","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Radiation effects testing at the 88-inch cyclotron 88英寸回旋加速器的辐射效应测试
M. McMahan
{"title":"Radiation effects testing at the 88-inch cyclotron","authors":"M. McMahan","doi":"10.1109/RADECS.1999.858563","DOIUrl":"https://doi.org/10.1109/RADECS.1999.858563","url":null,"abstract":"The 88-inch cyclotron at the Lawrence Berkeley National Laboratory provides radiation effects test facilities for both heavy ions and protons. The wide range of ions available, and the use of \"cocktail\" beams, allowing users to switch back and forth between several heavy ion beams without a retune of the accelerator, makes this facility a very versatile and economical choice for radiation effects testing.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"120 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123242673","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
New insights into fully-depleted SOI transistor response after total-dose irradiation 全剂量辐照后完全耗尽SOI晶体管响应的新见解
J. Schwank, M. Shaneyfelt, P. Dodd, J. Burns, C. Keast, P. Wyatt
{"title":"New insights into fully-depleted SOI transistor response after total-dose irradiation","authors":"J. Schwank, M. Shaneyfelt, P. Dodd, J. Burns, C. Keast, P. Wyatt","doi":"10.1109/RADECS.1999.858599","DOIUrl":"https://doi.org/10.1109/RADECS.1999.858599","url":null,"abstract":"In this work we explore the effects of total-dose ionizing irradiation on fully-depleted SOI transistors. Closed-geometry and standard transistors fabricated in two fully-depleted processes were irradiated with 10-keV x rays. Our results show that increases in radiation-induced leakage current are caused by positive charge trapping in the buried oxide inverting the back-channel interface. At moderate levels of trapped charge, the back-channel interface is slightly inverted causing a small leakage current to flow. This leakage current may be amplified to considerably higher levels by impact ionization. At high levels of trapped charge, the back-channel interface is fully inverted and the gate bias has little effect on leakage current. Large increases in leakage currents can be obtained with or without impact ionization occurring in the channel region. For these transistors, the worst-case bias configuration was determined to be the \"ON\" bias configuration for both the cases where radiation-induced transistor response was dominated by charge buildup in the buried oxide and in the trench sidewall isolation. These results have important implications on hardness assurance.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-03-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128160159","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 70
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