紫外敏感SiC光电二极管的辐射效应

1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI:10.1109/RADECS.1999.858624

S. Metzger, H. Henschel, O. Kohn, W. Lennartz

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引用次数: 3

摘要

我们用Co-60伽马、32 MeV质子和14 MeV中子测试了SiC光电二极管。在总伽马剂量为40 kGy(空气)时，紫外光电流下降到其初始值的50%左右。在9/spl次/10/sup / 12/ cm/sup -2/的质子辐照下观察到几乎相同的下降。但中子通量为1.5/spl次/10/sup 13/ cm/sup -2/后，信号仍为辐照前的85%。结果表明，光电流的减小是由玻璃窗变暗引起的。一些色心可以用氘灯的强紫外线退火。此外，对光电二极管进行氢处理可使辐射效应降低约20%。

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Radiation effects in ultraviolet sensitive SiC photodiodes

We tested SiC photodiodes with Co-60 gammas, 32 MeV protons and 14 MeV neutrons. The UV-photocurrent decreased to about 50% of its initial value at a total gamma dose of 40 kGy (Air). Nearly the same decrease was observed during proton irradiations of 9/spl times/10/sup 12/ cm/sup -2/. But after a neutron fluence of 1.5/spl times/10/sup 13/ cm/sup -2/ the signal was still 85% of that before irradiation. It is shown that the decrease of the photocurrent is caused by darkening of the glass window. Some of the color-centres could be annealed with the intense UV-light of a deuterium lamp. Furthermore hydrogen treatment of the photodiode reduces the radiation effects by about 20%.

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来源期刊

1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)

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