SPICE modeling of the transient response of irradiated MOSFETs

V. Pouget, H. Lapuyade, D. Lewis, Y. Deval, P. Fouillat, L. Sarger
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引用次数: 28

Abstract

A new SPICE model of irradiated MOSFET taking into account the real response of the four electrodes is proposed. A comparison between SPICE-generated transient response and PISCES device simulation demonstrates the accuracy benefits when used in complex electronic architectures.
辐照mosfet瞬态响应的SPICE建模
提出了一种考虑四个电极实际响应的辐照MOSFET SPICE模型。spice生成的瞬态响应与双鱼座器件仿真之间的比较证明了在复杂电子架构中使用时的精度优势。
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