辐照mosfet瞬态响应的SPICE建模

1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI:10.1109/RADECS.1999.858548

V. Pouget, H. Lapuyade, D. Lewis, Y. Deval, P. Fouillat, L. Sarger

{"title":"辐照mosfet瞬态响应的SPICE建模","authors":"V. Pouget, H. Lapuyade, D. Lewis, Y. Deval, P. Fouillat, L. Sarger","doi":"10.1109/RADECS.1999.858548","DOIUrl":null,"url":null,"abstract":"A new SPICE model of irradiated MOSFET taking into account the real response of the four electrodes is proposed. A comparison between SPICE-generated transient response and PISCES device simulation demonstrates the accuracy benefits when used in complex electronic architectures.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"92 12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"28","resultStr":"{\"title\":\"SPICE modeling of the transient response of irradiated MOSFETs\",\"authors\":\"V. Pouget, H. Lapuyade, D. Lewis, Y. Deval, P. Fouillat, L. Sarger\",\"doi\":\"10.1109/RADECS.1999.858548\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new SPICE model of irradiated MOSFET taking into account the real response of the four electrodes is proposed. A comparison between SPICE-generated transient response and PISCES device simulation demonstrates the accuracy benefits when used in complex electronic architectures.\",\"PeriodicalId\":135784,\"journal\":{\"name\":\"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)\",\"volume\":\"92 12 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-09-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"28\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RADECS.1999.858548\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RADECS.1999.858548","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 28

摘要

提出了一种考虑四个电极实际响应的辐照MOSFET SPICE模型。spice生成的瞬态响应与双鱼座器件仿真之间的比较证明了在复杂电子架构中使用时的精度优势。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

SPICE modeling of the transient response of irradiated MOSFETs

A new SPICE model of irradiated MOSFET taking into account the real response of the four electrodes is proposed. A comparison between SPICE-generated transient response and PISCES device simulation demonstrates the accuracy benefits when used in complex electronic architectures.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)

自引率

0.00%

发文量