低通量快中子对jfet损伤的电学和光学分析

1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI:10.1109/RADECS.1999.858633

S. Forster, A. Hoffmann, J. Charles, S. Kerns, D. Kerns, M. de la Bardonnie, P. Mialhe

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引用次数: 0

摘要

研究了快中子辐照(30mev)对硅n沟道jfet的影响。使用定制软件分析了栅极-通道结在几种影响下的电参数。电学参数的变化是由于大块半导体缺陷造成的。通过对栅极-通道结电致发光的分析，评价了辐照对钝化层的影响。

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Electrical and optical analysis of low fluence fast neutron damage to JFETs

The effects of fast neutron irradiation (30 MeV) on silicon n-channel JFETs are studied. Electrical parameters of the gate-channel junction are analyzed at several fluences using a custom software. Electrical parameter changes are attributed to bulk semiconductor defects. Irradiation effects on passivation overlayers are evaluated using analysis of gate-channel junction electroluminescence.

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1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)

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