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1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)最新文献

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Radiation tolerance of NPN bipolar technology with 30 GHz Ft NPN双极技术在30ghz Ft下的辐射容限
1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI: 10.1109/RADECS.1999.858615
O. Flament, S. Synold, J. de Pontcharra, S. Niel
{"title":"Radiation tolerance of NPN bipolar technology with 30 GHz Ft","authors":"O. Flament, S. Synold, J. de Pontcharra, S. Niel","doi":"10.1109/RADECS.1999.858615","DOIUrl":"https://doi.org/10.1109/RADECS.1999.858615","url":null,"abstract":"The tolerance to both ionizing dose and displacement damage of a Quasi-Self Aligned (QSA) single polysilicon emitter bipolar technology fabricated with a 0.35 /spl mu/m design rules CMOS is presented. In this work we explore the effect of dose rate, high dose level irradiation and elevated temperature irradiation on the electrical performance of single polysilicon bipolar transistors. The different results are discussed and comparison with previous are presented to place the technology with respect to others.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114764802","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Radiation-induced optical fibre loss in the far IR 远红外辐射引起的光纤损耗
1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI: 10.1109/RADECS.1999.858626
H. Henschel, O. Kohn
{"title":"Radiation-induced optical fibre loss in the far IR","authors":"H. Henschel, O. Kohn","doi":"10.1109/RADECS.1999.858626","DOIUrl":"https://doi.org/10.1109/RADECS.1999.858626","url":null,"abstract":"It was observed that the loss of a Ge-doped graded index (GI) fibre during gamma irradiation grows stronger at a longer wavelength (about 1300 nm) than at a shorter one (830 nm). The same is known from Ge-doped and undoped single mode (SM) fibres at about 1550 and 1300 nm. During longer irradiations (/spl les/2 d) it was found that the loss of the GI fibre at 830 nm was reduced by photobleaching, leading to approximately the same loss at 830 and 1300 nm during irradiation with higher light powers (/spl ges/10 /spl mu/W). The stronger loss increase at 1550 nm of a Ge-doped SM fibre continued for more than 70 days, leading to an about 1.5 times higher loss at 1550 nm than at 1300 nm. The reason seems to be a long-lived absorption peak in the far IR.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132660385","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Neutron and proton irradiation for latchup suppression in a radiation-tolerant commercial submicron CMOS process 在耐辐射商用亚微米CMOS工艺中，中子和质子辐照抑制闭锁
1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI: 10.1109/RADECS.1999.858605
R. Lacoe, S. Moss, J. V. Osborn, B. Janousek, S. Lalumondiere, S. Brown, D. C. Mayer
{"title":"Neutron and proton irradiation for latchup suppression in a radiation-tolerant commercial submicron CMOS process","authors":"R. Lacoe, S. Moss, J. V. Osborn, B. Janousek, S. Lalumondiere, S. Brown, D. C. Mayer","doi":"10.1109/RADECS.1999.858605","DOIUrl":"https://doi.org/10.1109/RADECS.1999.858605","url":null,"abstract":"Neutron and proton irradiations have been used to improve the latchup susceptibility of CMOS test structures fabricated at a radiation-tolerant commercial submicron CMOS foundry. The test structures were varied in critical spacing dimensions to represent a range of layout conditions in typical CMOS circuits. SPICE simulations were used to relate changes in latchup tolerance to reduced parasitic bipolar gains and increased well and substrate resistances in these CMOS circuits. It is shown that decreasing transistor gains and increasing resistances can have competing influences on latchup threshold. These competing effects can explain the observed initial reduction in latchup threshold for some proton irradiation conditions.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133419177","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
New experimental evidence of latent interface-trap buildup in power VDMOSFETs 功率vdmosfet中潜在界面陷阱积累的新实验证据
1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI: 10.1109/RADECS.1999.858592
A. Jaksic, G. Ristić, M. Pejovic
{"title":"New experimental evidence of latent interface-trap buildup in power VDMOSFETs","authors":"A. Jaksic, G. Ristić, M. Pejovic","doi":"10.1109/RADECS.1999.858592","DOIUrl":"https://doi.org/10.1109/RADECS.1999.858592","url":null,"abstract":"The paper presents new experimental evidence of the latent interface-trap buildup during annealing of gamma-ray irradiated power VDMOSFETs. We try to reveal the nature of this still ill-understood phenomenon by isothermal annealing, switching temperature annealing and switching bias annealing experiments. Possible explanations of obtained experimental results are discussed in the context of several models for post-irradiation behavior of radiation-induced defects.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"105 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132160828","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Use of commercial VDMOSFETs in electronic systems subjected to radiation 商用vdmosfet在受辐射的电子系统中的应用
1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI: 10.1109/RADECS.1999.858604
C. Picard, C. Brisset, O. Quittard, M. Marceau, A. Hoffmann, F. Joffre, J. Charles
{"title":"Use of commercial VDMOSFETs in electronic systems subjected to radiation","authors":"C. Picard, C. Brisset, O. Quittard, M. Marceau, A. Hoffmann, F. Joffre, J. Charles","doi":"10.1109/RADECS.1999.858604","DOIUrl":"https://doi.org/10.1109/RADECS.1999.858604","url":null,"abstract":"This study explores the effectiveness of pre-irradiation as a hardening technique for COTS components used in electronic power systems. This technique greatly improves the radiation tolerance of VDMOSFETs in such systems, whereby a small change in R/sub dson/ is observed.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"30 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116225567","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Behaviour of organic materials in radiation environment 有机材料在辐射环境中的行为
1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI: 10.1109/RADECS.1999.858582
M. Tavlet, S. Ilie
{"title":"Behaviour of organic materials in radiation environment","authors":"M. Tavlet, S. Ilie","doi":"10.1109/RADECS.1999.858582","DOIUrl":"https://doi.org/10.1109/RADECS.1999.858582","url":null,"abstract":"Radiation effects in polymers are reminded together with the ageing factors. Radiation-ageing results are mainly discussed about thermosetting insulators, structural composites and cable-insulating materials. Some hints are given about high-voltage insulations, cooling fluids, organic scintillators and light-guides. Some parameters to be taken into account for the estimate of the lifetime of components in radiation environment are also shown.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"518 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116247067","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Physical mechanisms involved during transient irradiation of a 1300 nm laser diode 1300nm激光二极管瞬态辐照的物理机制
1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI: 10.1109/RADECS.1999.858622
E. Pailharey, J. Baggio, C. D'hose, I. Musseau
{"title":"Physical mechanisms involved during transient irradiation of a 1300 nm laser diode","authors":"E. Pailharey, J. Baggio, C. D'hose, I. Musseau","doi":"10.1109/RADECS.1999.858622","DOIUrl":"https://doi.org/10.1109/RADECS.1999.858622","url":null,"abstract":"The behavior of a commercial 1300 nm laser diode under transient irradiations is studied to validate the use of an optical data link in a radiative environment. A Nd:YAG laser is used to simulate the irradiation without any permanent damage. Two specific wavelengths are selected: 1064 nm which allows a selective excitation of the laser cavity simulating transient effects of a single particle and 532 nm which interacts with the whole device. The temporal response of the diode is first observed and its shape is interpreted as a function of the physical structure of the device. Then the variation of the time of return to equilibrium after a perturbation is presented as a function of bias current. The limitations on the optical links for both analogue and digital applications are then discussed.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124011707","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Modeling BJT radiation response with non-uniform energy distributions of interface traps 基于界面阱非均匀能量分布的BJT辐射响应建模
1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI: 10.1109/RADECS.1999.858549
H. Barnaby, C. Cirba, peixiong zhao, S. Kosier, P. Fouillat, X. Montagner
{"title":"Modeling BJT radiation response with non-uniform energy distributions of interface traps","authors":"H. Barnaby, C. Cirba, peixiong zhao, S. Kosier, P. Fouillat, X. Montagner","doi":"10.1109/RADECS.1999.858549","DOIUrl":"https://doi.org/10.1109/RADECS.1999.858549","url":null,"abstract":"Radiation-induced oxide defects that degrade electrical characteristics of BJTs can be measured with the use of gated diodes. The buildup of defects and their effect on device radiation response are modeled with computer simulation.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"222 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122883327","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 17
Micro-irradiation experiments in MOS transistors using synchrotron radiation 同步辐射MOS晶体管的微辐照实验
1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI: 10.1109/RADECS.1999.858591
J. Autran, P. Masson, N. Freud, C. Raynaud, C. Riekel
{"title":"Micro-irradiation experiments in MOS transistors using synchrotron radiation","authors":"J. Autran, P. Masson, N. Freud, C. Raynaud, C. Riekel","doi":"10.1109/RADECS.1999.858591","DOIUrl":"https://doi.org/10.1109/RADECS.1999.858591","url":null,"abstract":"Spatially-resolved total-dose degradation has been performed in MOS transistors by focusing X-ray synchrotron radiation on the gate electrode with micrometer resolution. The influence of the resulting permanent degradation on device electrical properties has been analyzed using current-voltage and charge pumping measurements, in concert with optical characterization (photon emission) and quasi-breakdown measurements.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132169753","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Heavy ions induced latent stuck bits revealed by total dose irradiation in 4T cells SRAMs 总剂量辐照对4T细胞sram中重离子诱导的潜伏卡位的影响
1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI: 10.1109/RADECS.1999.858550
J. David, J. Loquet, S. Duzellier
{"title":"Heavy ions induced latent stuck bits revealed by total dose irradiation in 4T cells SRAMs","authors":"J. David, J. Loquet, S. Duzellier","doi":"10.1109/RADECS.1999.858550","DOIUrl":"https://doi.org/10.1109/RADECS.1999.858550","url":null,"abstract":"Many stuck bits have been observed in 4T cells SRAMs exposed to heavy ions and total dose irradiations. This phenomenon, attributed to local dose deposition, is modeled accounting charge generation, recombination, transport and trapping in view of being better understood.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127265567","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 17
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