总剂量辐照对4T细胞sram中重离子诱导的潜伏卡位的影响

1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI:10.1109/RADECS.1999.858550

J. David, J. Loquet, S. Duzellier

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引用次数: 17

摘要

在暴露于重离子和总剂量照射下的4T细胞sram中观察到许多卡粒。这种归因于局部剂量沉积的现象被建模为考虑电荷的产生、重组、传输和捕获，以便更好地理解。

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Heavy ions induced latent stuck bits revealed by total dose irradiation in 4T cells SRAMs

Many stuck bits have been observed in 4T cells SRAMs exposed to heavy ions and total dose irradiations. This phenomenon, attributed to local dose deposition, is modeled accounting charge generation, recombination, transport and trapping in view of being better understood.

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来源期刊

1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)

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