基于界面阱非均匀能量分布的BJT辐射响应建模

1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI:10.1109/RADECS.1999.858549

H. Barnaby, C. Cirba, peixiong zhao, S. Kosier, P. Fouillat, X. Montagner

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引用次数: 17

摘要

辐射引起的氧化缺陷会降低bjt的电学特性，可以用门控二极管来测量。用计算机模拟模拟了缺陷的形成及其对器件辐射响应的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Modeling BJT radiation response with non-uniform energy distributions of interface traps

Radiation-induced oxide defects that degrade electrical characteristics of BJTs can be measured with the use of gated diodes. The buildup of defects and their effect on device radiation response are modeled with computer simulation.

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来源期刊

1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)

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